Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
View Patent ↗A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.
1. A substrate crystallized by a crystallizing method of irradiating a laser beam onto an incident face of a non-single-crystal semiconductor film to crystallize the semiconductor film, the laser beam having a light intensity profile including a plurality of inverted triangular peak patterns in cross section, the crystallizing method comprising:
providing a cap film which presents properties of absorbing a part of the laser beam, on the incident face of the non-single-crystal semiconductor film,
wherein the cap film is composed of at least one layer of silicon dioxide film and
at least one layer of SiOx film and the SiOx film has a thickness of more than 150 nm, where x is less than 2.
2. A substrate crystallized by a crystallizing method of irradiating a laser beam onto an incident face of a non-single-crystal semiconductor film to crystallize the semiconductor film, the laser beam having a light intensity profile including a plurality of inverted triangular peak patterns in cross section, the crystallizing method comprising:
providing a cap film which presents properties of absorbing a part of the laser beam, on the incident face of the non-single-crystal semiconductor film,
wherein the cap film is composed of at least two layers of silicon oxide films differing in the relative proportions of Si and 0, at least one layer of said silicon oxide films is SiOx film and the SiOx film has a thickness of more than 150 nm, where x is less than 2.
3. A thin-film transistor comprising:
a channel region, part of or all of a source region, and part of or all of a drain region which are provided in a crystallization region fabricated by a crystallizing method of irradiating a laser beam onto an incident face of a non-single-crystal semiconductor film to crystallize the semiconductor film, the laser beam having a light intensity profile including a plurality of inverted triangular peak patterns in cross section, the crystallizing method comprising:
providing a cap film which presents properties of absorbing a part of the laser beam, on the incident face of the non-single-crystal semiconductor film,
wherein the cap film is composed of at least one layer of silicon dioxide film and at least one layer of SiOx film and the SiOx film has a thickness of more than 150 nm, where x is less than 2.
4. A thin-film transistor comprising:
a channel region, part of or all of a source region, and part of or all of a drain region which are provided in a crystallization region fabricated by a crystallizing method of irradiating a laser beam onto an incident face of a non-single-crystal semiconductor film to crystallize the semiconductor film, the laser beam having a light intensity profile including a plurality of inverted triangular peak patterns in cross section, the crystallizing method comprising;
providing a cap film which presents properties of absorbing a part of the laser beam, on the incident face of the non-single-crystal semiconductor film,
the cap film is composed of at least two layers of silicon oxide films differing in the relative proportions of Si and 0, at least one layer of said silicon oxide films is SiOx film and the SiOx film has a thickness of more than 150 nm, where x is less than 2.