Piezoelectric device having a ferroelectric film including a solid solution
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
1. A piezoelectric device having a lower electrode, a ferroelectric film and an upper electrode, the ferroelectric film including a solid solution that includes:
a complex oxide having a perovskite structure and including at least bismuth; and
an oxide including at least silicon.
2. The piezoelectric device according to claim 1 , the ferroelectric film further including an oxide that includes at least germanium.
3. The piezoelectric device according to claim 2 , a molar ratio of germanium to silicon in the ferroelectric film is 0<Ge/Si≦10.
4. The piezoelectric device according to claim 2 , a molar ratio of germanium to silicon in the ferroelectric film is 0<Ge/Si≦1.
5. The piezoelectric device according to claim 1 , the ferroelectric film further including an oxide that includes at least tin.
6. The piezoelectric device according to claim 5 , a molar ratio of tin to silicon in the ferroelectric film is 0<Sn/Si<9.
7. The piezoelectric device according to claim 1 , the complex oxide further including lanthanum.
8. The piezoelectric device according to claim 1 , the complex oxide further including calcium.