IP Library › Granted Patent US 7,960,916
Granted Patent B2
US 7,960,916 · App. 12/122,265 · Granted Jun 14, 2011

Display device and electronic device using thin-film transistors formed on semiconductor thin films which are crystallized on insulating substrates

Assignee: Advanced LCD Technologies Development Center Co., Ltd.
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Quick Facts
Patent No.
US 7,960,916
App. No.
12/122,265
Granted
Jun 14, 2011
Kind
B2
Abstract

A method of receiving video data, a control signal, etc. via a non-contact transmission path is adopted, and a receiving circuit for receiving and amplifying a signal is formed on the same insulating substrate as a display device. Thus, there are provided a thin-film transistor which is formed in a semiconductor thin film that is formed on the insulating substrate and crystallized in a predetermined direction, and an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate. The direction of movement of carriers flowing in the thin-film transistor is parallel to the direction of crystallization of the semiconductor thin film, and the inductor and the thin-film transistor are integrated so as to be electrically coupled directly or indirectly.

Claims (20)

1. A display device comprising:

a thin-film transistor which is formed in a semiconductor thin film which is formed on an insulating substrate and crystallized in a predetermined direction;

an antenna which is formed by using a metal wiring film provided on the insulating substrate;

an electromagnetic wave receiving circuit which uses a plurality of the thin-film transistors and is formed of all or at least one of an amplifying circuit, a frequency mixing circuit and an oscillation circuit, which are constituted by selectively integrating an inductor which is formed by using a metal wiring film, and a resistor;

a digital signal processing circuit which is constituted by using a plurality of the thin-film transistors;

scanning lines and signal lines which connect a plurality of the thin-film transistors which are arrayed in a matrix; and

an active matrix which is composed of pixel electrodes which are connected to the respective thin-film transistors.

2. A display device comprising:

a thin-film transistor which is formed in a semiconductor thin film which is formed on an insulating substrate and crystallized in a predetermined direction;

an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate;

an electromagnetic wave receiving circuit which uses a plurality of the thin-film transistors and is formed of all or at least one of an amplifying circuit, a frequency mixing circuit and an oscillation circuit, which are constituted by selectively integrating an inductor which is formed by using a metal wiring film, and a resistor;

a digital signal processing circuit which is constituted by using a plurality of the thin-film transistors; and

an active matrix which is composed of a plurality of the thin-film transistors which are arrayed in a matrix, scanning lines and signal lines which connect the thin-film transistors, and pixel electrodes which are connected to the respective thin-film transistors.

3. The display device according to claim 1 or 2 , wherein the thin-film transistors include a thin-film transistor having a cutoff frequency that is higher than 1 GHz.

4. The display device according to claim 1 or 2 , wherein the thin-film transistors include a thin-film transistor having a maximum oscillation frequency that is higher than 10 GHz.

5. The display device according to claim 1 or 2 , wherein the thin-film transistors include a thin-film transistor having a ratio of a maximum oscillation frequency to a cutoff frequency, which is greater than 4.

6. The display device according to claim 1 or 2 , wherein a frequency of a reception electromagnetic signal is higher than 900 MHz.

7. The display device according to claim 1 or 2 , wherein the inductor is an inductor having an inductance value which is higher than 20 nH, and having Q which is greater than 4.

8. The display device according to claim 1 or 2 , wherein the metal wiring film of the inductor is formed at the same time as any one of electrodes of the thin-film transistor.

9. The display device according to claim 1 or 2 , wherein the insulating substrate is a glass substrate or a plastic substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2013
From: ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD.
To: SHARP KABUSHIKI KAISHA
Reel/Frame 029585/0346 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 19, 2008
From: KAWACHI, GENSHIRO
To: ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD.
Reel/Frame 020964/0263 →
Priority Claims (2)
JP 2007-130923 · May 16, 2007 · national
JP 2008-098605 · Apr 4, 2008 · national
Continuity (1)
Related Publication 20080283843A1 · Nov 20, 2008