Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
1. A method of performing plasma immersion ion implantation on a semiconductor workpiece in a plasma reactor chamber, comprising:
prior to introducing the workpiece into the reactor, depositing a partially conductive seasoning film on interior surfaces of said chamber, said seasoning film comprising silicon, oxygen and hydrogen and having a silicon content of between 70% and 85%;
electrostatically clamping the workpiece on a workpiece support surface in the reactor chamber by applying an electrostatic clamping voltage to an electrode underlying and insulated from the workpiece support surface;
generating a plasma in the chamber from a process gas containing species to be ion implanted in the workpiece by coupling RF plasma source power from an RF source power generator to said process gas;
applying RF bias power from an RF bias power generator to a disk-shaped electrode underlying and insulated from the workpiece and having a circumferential edge underlying a circumferential edge of the workpiece, said RF bias power being sufficient to produce a high RF bias voltage on the workpiece on the order of 5-20 kV corresponding to a desired ion implantation depth profile below the surface of said workpiece of said species to be implanted, wherein said electrostatic clamping voltage is on the order of or exceeds a D.C. component of said RF bias voltage; and
removing said workpiece by turning off said clamping voltage, waiting for electrical discharge of said workpiece through a portion of said seasoning film covering said workpiece support surface, and thereafter lifting said workpiece from said workpiece support surface.
2. The method of claim 1 wherein depositing a seasoning film comprises flowing a sufficient amount of a silicon-containing gas into the chamber whereby silicon content provides an electrical resistivity in said seasoning film on the order of 10 9 Ω-m.
3. The method of claim 1 further comprising:
after removal of a workpiece from said workpiece support surface, removing said seasoning film by:
(a) dissociating a fluorine-containing gas in a plasma generated in a remote plasma source;
(b) feeding plasma by-products from said remote plasma source into said chamber.
4. The method of claim 3 further comprising refraining from generating a plasma in said chamber during removal of said seasoning film.
5. The method of claim 1 wherein said seasoning film has a silicon content sufficient to provide an electrical resistivity less than about 10 10 Ω-m in the film and which is sufficiently limited to provide adhesiveness similar to that of silicon dioxide.
6. The method of claim 1 wherein depositing a seasoning film comprises flowing a silicon-containing gas and oxygen into said chamber at flow rates of about 200-400 sccm and 50-100 sccm, respectively while applying RF plasma source power to said silicon-containing and oxygen gases.
7. The method of claim 6 wherein RF plasma source power is applied to a pair of mutually transverse external reentrant conduits coupled to pairs of ports separated across a diameter of said workpiece support surface.
8. A method of performing plasma immersion ion implantation on a semiconductor workpiece in a plasma reactor chamber, comprising:
prior to introducing the workpiece into the reactor, depositing a partially conductive seasoning film on interior surfaces of said chamber, said seasoning film comprising silicon, oxygen and hydrogen and having a silicon content sufficient to provide an electrical resistivity less than about 10 10 Ω-m in the film and which is sufficiently limited for said film to deposit as a non-powdery solid coating;
electrostatically clamping the workpiece on a workpiece support surface in the reactor chamber by applying an electrostatic clamping voltage to an electrode underlying and insulated from the workpiece support surface;
generating a plasma in the chamber from a process gas containing species to be ion implanted in the workpiece by coupling RF plasma source power from an RF source power generator to said process gas;
applying RF bias power from an RF bias power generator to a disk-shaped electrode underlying and insulated from the workpiece and having a circumferential edge underlying a circumferential edge of the workpiece, said RF bias power being sufficient to produce a high RF bias voltage on the workpiece on the order of 5-20 kV corresponding to a desired ion implantation depth profile below the surface of said workpiece of said species to be implanted, wherein said electrostatic clamping voltage is on the order of or exceeds a D.C. component of said RF bias voltage; and
removing said workpiece by turning off said clamping voltage, waiting for electrical discharge of said workpiece through a portion of said seasoning film covering said workpiece support surface, and thereafter lifting said workpiece from said workpiece support surface.
9. The method of claim 8 wherein depositing a seasoning film comprises flowing a sufficient amount of a silicon-containing gas into the chamber whereby silicon content provides an electrical resistivity in said seasoning film on the order of 10 9 Ω-m.
10. The method of claim 8 further comprising:
after removal of a workpiece from said workpiece support surface, removing said seasoning film by:
(a) dissociating a fluorine-containing gas in a plasma generated in a remote plasma source;
(b) feeding plasma by-products from said remote plasma source into said chamber.
11. The method of claim 10 further comprising refraining from generating a plasma in said chamber during removal of said seasoning film.
12. The method of claim 8 wherein depositing a seasoning film comprises flowing a silicon-containing gas and oxygen into said chamber at flow rates of about 200-400 sccm and 50-100 sccm, respectively while applying RF plasma source power to said silicon-containing and oxygen gases.
13. The method of claim 12 wherein RF plasma source power is applied to a pair of mutually transverse external reentrant conduits coupled to pairs of ports separated across a diameter of said workpiece support surface.