Solid-state image sensor and manufacturing method thereof
An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
1. A solid-state image sensor comprising:
a semiconductor substrate;
photoelectric conversion units formed in said semiconductor substrate;
microlenses formed above said semiconductor substrate so as to be positioned above the respective photoelectric conversion units; and
a color filter which includes filter films arranged in a two-dimensional array and which is formed above said semiconductor substrate so that the filter films are positioned above the respective photoelectric conversion units,
wherein each microlens is made of a low refractive index material and a high refractive index material,
said photoelectric conversion units are a first photoelectric conversion unit and a second photoelectric conversion unit, said second photoelectric conversion unit being positioned below one of the filter films transmitting light of a longer wavelength than a wavelength of the light transmitted by another one of the filter films positioned above said first photoelectric conversion unit, and
a volume of a high refractive index material included in one of the microlenses positioned above said second photoelectric conversion unit is greater than a volume of a high refractive index material included in another one of the microlenses positioned above said first photoelectric conversion unit.
2. A solid-state image sensor comprising:
a semiconductor substrate;
photoelectric conversion units formed in said semiconductor substrate; and
microlenses formed above said semiconductor substrate so as to be positioned above the respective photoelectric conversion units,
wherein each microlens is made of a low refractive index material and a high refractive index material,
said photoelectric conversion units are a first photoelectric conversion unit and a second photoelectric conversion unit, in which light enters at a greater incident angle than an incident angle at which light enters said first photoelectric conversion unit, and
a volume of a high refractive index material included in one of the microlenses positioned above said second photoelectric conversion unit is greater than a volume of a high refractive index material included in another one of the microlenses positioned above said first photoelectric conversion unit.
3. A solid-state image sensor comprising:
a semiconductor substrate;
light-receiving cells which are formed in said semiconductor substrate, and have photoelectric conversion units which generate signal charge in accordance with a luminance of incident light; and
microlenses formed above the respective photoelectric conversion units,
wherein one of said microlenses of a first light-receiving cell and another one of said microlenses of a second light-receiving cell are respectively made of at least a low refractive index material and a high refractive index material, and
a volume of the high refractive index material included in said microlens of said first light-receiving cell is greater than a volume of the high refractive index material included in said microlens of said second light-receiving cell.