Integrated circuit semiconductor device including stacked level transistors
An integrated circuit semiconductor device includes a first transistor formed at a lower substrate and configured with at least one of a vertical transistor and a planar transistor. A bonding insulation layer is formed on the first transistor, and an upper substrate is bonded on the bonding insulation layer. A second transistor configured with at least one of a vertical transistor and a planar transistor is formed at the upper substrate. The first transistor and the second transistor are connected by an interconnection layer.
1. An integrated circuit device, comprising:
a first semiconductor substrate having at least one of a first vertical-channel transistor and a first planar-channel transistor therein, said first substrate comprising a fin-shaped active pattern extending in a first direction therein and a first plurality of spaced-apart pillar active regions on the fin-shaped active pattern that are surrounded by a first insulated gate electrode, said first plurality of spaced-apart pillar active regions comprising respective source/drain regions adjacent tops thereof;
a bonding insulation layer on said first semiconductor substrate;
a second semiconductor substrate having at least one of a second vertical-channel transistor and a second planar-channel transistor therein, on said bonding insulation layer; and
an electrical interconnect electrically connected to a terminal of the at least one of a first vertical-channel transistor and a first planar-channel transistor, extending through said bonding insulation layer.
2. The integrated circuit device of claim 1 , further comprising:
a first plurality of U-shaped lower capacitor electrodes respectively connected to the source/drain regions in the first plurality of spaced-apart pillar active regions; and
a first upper capacitor electrode on said first plurality of U-shaped lower capacitor electrodes.
3. The integrated circuit device of claim 2 , wherein said bonding insulation layer extends on said first upper capacitor electrode.
4. The integrated circuit device of claim 3 , wherein said second substrate comprises a second plurality of spaced-apart pillar active regions therein that are surrounded by a second insulated gate electrode; and wherein each of the second plurality of spaced-apart pillar active regions comprises a respective source/drain region adjacent a top thereof.
5. The integrated circuit device of claim 4 , further comprising:
a second plurality of U-shaped lower capacitor electrodes respectively connected to the source/drain regions in the second plurality of spaced-apart pillar active regions; and
a second upper capacitor electrode on said second plurality of U-shaped lower capacitor electrodes.
6. An integrated circuit semiconductor device comprising:
a first transistor formed at a lower substrate and comprising at least one of a vertical transistor and a planar transistor;
a bonding insulation layer provided on the first transistor;
a second transistor formed at an upper substrate bonded with the bonding insulation layer, and comprising at least one of a vertical transistor and a planar transistor; and
an interconnection layer connecting the first transistor and the second transistor together;
wherein the vertical transistor of the first transistor or the second transistor comprises:
a first gate structure surrounding a side surface of a first active pattern provided at the lower substrate or the upper substrate, said first active pattern comprising a fin active pattern extending in one direction and pillar active pattern provided on the fin active pattern; and
first impurity regions provided in a surface portion of the first active pattern and under the first gate structure.
7. The device of claim 6 , wherein the pillar active pattern of the first active pattern comprises an upper portion having a first width, a middle portion having a second width that is smaller than the first width, and a lower portion having a third width that is greater than the second width.
8. The device of claim 6 , wherein the pillar active pattern of the first active pattern comprises an upper portion having a first width, and a lower portion having a second width that is greater than the first width.
9. The device of claim 6 , further comprising a capacitor electrically connected to the first impurity region provided in the surface portion of the first active pattern.
10. The device of claim 6 , further comprising a word line connected to the first gate structure and extending in a horizontal direction.
11. The device of claim 6 , wherein the first gate structure comprises a first gate insulation layer pattern and a first conductive pattern.
12. The device of claim 6 , wherein the planar transistor of the first transistor or the second transistor comprises:
a second gate structure provided on a second active pattern provided at the lower substrate or the upper substrate; and
second impurity regions provided in a surface portion of the second active pattern exposed by the second gate structure.
13. The device of claim 12 , wherein the first active pattern and the second active pattern have top surfaces at the same height.
14. An integrated circuit semiconductor comprising:
a vertical transistor comprising a first gate structure surrounding a side surface of a first active pattern provided at a lower substrate, and first impurity regions provided in a surface portion of the first active pattern and under the first gate structure, said first active pattern comprising a fin active pattern and a pillar active pattern on the fin active pattern;
a bonding insulation layer provided on the vertical transistor;
a planar transistor comprising a second gate structure provided on a second active pattern provided at an upper substrate bonded with the bonding insulation layer, and second impurity regions provided in a surface portion of the second active pattern exposed by the second gate structure; and
an interconnection layer connecting the vertical transistor and the planar transistor together.
15. The device of claim 14 , further comprising a second planar transistor comprising a third gate structure provided on a third active pattern provided at the lower substrate, and third impurity regions provided in a surface portion of the third active pattern exposed by the third gate structure.
16. The device of claim 14 , further comprising a second vertical transistor comprising a third gate structure surrounding a side surface of a third active pattern provided at the upper substrate, and third impurity regions provided in a surface portion of the third active pattern and under the third gate structure.
17. An integrated circuit device, comprising:
a first substrate having a first vertical-channel transistor therein, said first vertical-channel transistor comprising:
a fin-shaped semiconductor active region extending in a first direction across said first substrate;
a plurality of spaced-apart pillar-shaped semiconductor active regions on the fin-shaped semiconductor active region;
a first insulated gate electrode surrounding said plurality of spaced-apart pillar-shaped semiconductor active regions; and
a plurality of source/drain regions adjacent in said plurality of spaced-apart pillar-shaped semiconductor active regions;
a bonding insulation layer on said first substrate; and
a second substrate having at least one of a second vertical-channel transistor and a planar-channel transistor therein, on said bonding insulating layer.