Patterning 3D features in a substrate
Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.
1. A method of forming a 3D structure in a substrate, the method comprising:
depositing a layer of resist over the substrate;
patterning the layer of resist to define an edge at a predetermined location;
reflowing the resist to form a tapered region extending from the edge, using a thermal reflow process;
concurrently etching both the reflowed resist and the substrate to transfer the tapered profile of the reflowed resist into the underlying substrate so as to form an angled surface; and
discontinuing etching before all of the resist is consumed by the etching.
2. The method recited in claim 1 wherein concurrently etching comprises dry-etching.
3. The method recited in claim 2 further comprising removing a remainder of the resist on the substrate after discontinuing etching.
4. The method recited in claim 2 further comprising:
depositing an etch stop layer over the substrate; and
patterning the etch stop layer to form an opening about the predetermined location.
5. The method recited in claim 4 wherein patterning the resist comprises forming the edge within the opening formed in the etch stop layer.
6. The method recited in claim 2 wherein concurrently etching comprises etching the resist with a first etchant and etching the substrate with a second etchant different from the first etchant.
7. The method recited in claim 6 wherein the first etchant comprises an oxidizing gas.
8. The method recited in claim 6 wherein the second etchant comprises a halogen-containing gas.
9. The method recited in claim 2 wherein concurrently etching comprises etching with an etch chemistry that achieves an initial preselected resist:substrate etch ratio.
10. The method recited in claim 9 wherein concurrently etching comprises change the etch chemistry as etching proceeds to change the resist:substrate etch ratio.
11. The method recited in claim 2 wherein patterning the layer of resist comprises forming a line of resist.
12. A method of fabricating a mirror in a substrate, the method comprising:
depositing a layer of resist over the substrate;
patterning the layer of resist to define an edge at a predetermined location;
reflowing the resist to form a tapered region extending from the edge, using a thermal reflow process;
concurrently etching both the reflowed resist and the substrate to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface; and
depositing a coating on the angled surface to form the mirror.
13. The method recited in claim 12 further comprising:
depositing an etch stop layer over the substrate; and
patterning the etch stop layer to form an opening about the predetermined location.
14. The method recited in claim 13 wherein patterning the resist comprises forming the edge within the opening formed in the etch stop layer.
15. The method recited in claim 13 wherein concurrently etching forms a cavity in the substrate, the method further comprising:
filling the cavity with a fill material;
planarizing the substrate after filling the cavity until the etch stop layer is reached; and
removing the etch stop layer.
16. The method recited in claim 13 wherein the coating comprises a dielectric.
17. The method recited in claim 13 wherein concurrently etching comprising etching the resist with a first etchant and etching the substrate with a second etchant different from the first etchant.
18. The method recited in claim 17 wherein the first etchant comprises an oxidizing gas.
19. The method recited in claim 17 wherein the second etchant comprises a halogen-containing gas.
20. The method recited in claim 13 wherein concurrently etching comprises etching with an etch chemistry that achieves an initial preselected resist:substrate etch ratio.
21. The method recited in claim 20 concurrently etching comprises change the etch chemistry as etching proceeds to change the resist:substrate etch ratio.
22. The method recited in claim 13 wherein patterning the layer of resist comprises forming a line of resist.
23. The method recited in claim 13 wherein:
the substrate has an upper surface and an optical waveguide fabricated beneath the upper surface of the substrate; and
concurrently etching continues until the angled surface intersects the optical waveguide.