IP Library › Granted Patent US 7,988,941
Granted Patent B2
US 7,988,941 · App. 12/169,114 · Granted Aug 2, 2011

Graphene sheet and method of preparing the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,988,941
App. No.
12/169,114
Granted
Aug 2, 2011
Kind
B2
Abstract

An economical method of preparing a large-sized graphene sheet having a desired thickness includes forming a film, the film comprising a graphitizing catalyst; heat-treating a gaseous carbon source in the presence of the graphitizing catalyst to form graphene; and cooling the graphene to form a graphene sheet. A graphene sheet prepared according to the disclosed method is also described.

Claims (15)

1. A method of preparing a graphene sheet, the method comprising:

depositing a film consisting of a graphitizing catalyst; wherein a width of the film is one millimeter or greater;

heat-treating a gaseous carbon source in the presence of the graphitizing catalyst to form graphene, while maintaining the shape of the film; and

cooling the graphene to form a graphene sheet, wherein a width and a length of the graphene sheet are each about 1 millimeter or greater.

2. The method of claim 1 , wherein the gaseous carbon source is a compound having about 1 carbon atom to about 7 carbon atoms.

3. The method of claim 1 , wherein the gaseous carbon source is a compound selected from the group consisting of carbon monoxide, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, toluene, methane, and a combination comprising at least one of the foregoing compounds.

4. The method of claim 1 , wherein the heat-treating is performed at a temperature of about 300° C. to about 2000° C.

5. The method of claim 1 , wherein the film has a thickness of about 1 nm to about 5,000 nm.

6. The method of claim 5 , wherein the film has a thickness of about 1 nm to about 1000 nm.

7. The method of claim 5 , wherein the film has a thickness of about 0.01 mm to about 5 mm.

8. The method of claim 1 , wherein the heat-treating is conducted for about 0.001 hour to about 1000 hours.

9. The method of claim 1 , wherein the graphitizing catalyst comprises an element selected from the group consisting of Ni, Co, Fe, Pt Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, and a combination comprising at least one of the foregoing elements.

10. The method of claim 1 , further comprising separating the graphene sheet from the graphitizing catalyst by treating the graphene sheet with an acid after cooling the graphene sheet.

11. The method of claim 1 , wherein hydrogen is further supplied with the gaseous carbon source.

12. The method of claim 1 , wherein the graphene consists of a single layer of graphene.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2008
From: CHOI, JAE-YOUNG; SHIN, HYEON-JIN; YOON, SEON-MI
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 021204/0674 →
Priority Claims (2)
KR 10-2007-0108860 · Oct 29, 2007 · national
KR 10-2008-0023457 · Mar 13, 2008 · national
Continuity (1)
Related Publication 20090110627A1 · Apr 30, 2009