Chip package structure and method of fabricating the same
A chip package structure including a heat dissipation substrate, a chip and a heterojunction heat conduction buffer layer is provided. The chip is disposed on the heat dissipation substrate. The heterojunction heat conduction buffer layer is disposed between the heat dissipation substrate and the chip. The heterojunction heat conduction buffer layer includes a plurality of pillars perpendicular to the heat dissipation substrate. The aspect ratio of each pillar is between about 3:1 and 50:1.
1. A chip package structure, comprising:
a heat dissipation substrate;
a chip, disposed on the heat dissipation substrate; and
a heterojunction heat conduction buffer layer, disposed between the heat dissipation substrate and the chip, wherein the heterojunction heat conduction buffer layer includes a plurality of pillars perpendicular to the heat dissipation substrate and each of the pillars has an aspect ratio between about 3:1 and 50:1.
2. The chip package structure according to claim 1 , wherein a material of the heterojunction heat conduction buffer layer comprises tin or copper.
3. The chip package structure according to claim 1 , wherein a cross-section of each of the pillars is circular, rectangular, triangular, or diamond.
4. The chip package structure according to claim 1 , wherein the pillars of the heterojunction heat conduction buffer layer are arranged in array.
5. The chip package structure according to claim 1 , wherein height of the heterojunction heat conduction buffer layer is ⅕- 1/10 of length or width of the heterojunction heat conduction buffer layer.
6. The chip package structure according to claim 1 , wherein the heterojunction heat conduction buffer layer further comprises a connecting layer connecting tops of the pillars.
7. The chip package structure according to claim 1 , further comprising a bonding layer disposed between the chip and the heterojunction heat conduction buffer layer.
8. The chip package structure according to claim 7 , wherein a material of the bonding layer is the same as a material of the heterojunction heat conduction buffer layer.
9. The chip package structure according to claim 7 , wherein a material of the bonding layer is different from a material of the heterojunction heat conduction buffer layer.
10. The chip package structure according to claim 7 , wherein a material of the bonding layer comprises tin (Sn), copper, gold (Au), silver, or Au—Sn alloy.
11. The chip package structure according to claim 1 , further comprising a filler disposed among the pillars of the heterojunction heat conduction buffer layer.
12. The chip package structure according to claim 11 , wherein a material of the filler comprises metallic powder or polymer.
13. The chip package structure according to claim 1 , wherein the chip comprises a solar cell chip or a light emitting diode chip.