Transistor circuit formation substrate
A specially designed mask controls the arrangement of conductive materials that form a source and drain of a transistor. Designing the mask can be costly and time-consuming, which means that the testing of a circuit involving a transistor can also be costly, time consuming and a barrier towards efficient circuit development and testing. Accordingly, the present invention provides a pre-fabricated, general-purpose pattern comprising an array of conductive islands. The pattern is used as a source and a drain terminal for the formation of a thin-film transistor and as a conductive source for the formation of other electrical components upon the array.
1. A transistor circuit formation substrate, comprising:
a substrate;
a plurality of conductive islands positioned over the substrate;
a first semiconductor material disposed between a first conductive island among the plurality of conductive islands and a second conductive island among the plurality of conductive islands; and
a second semiconductor material disposed between a third conductive island among the plurality of conductive islands and a fourth conductive island among the plurality of conductive islands;
the first conductive island and the second conductive island being provided in a first column,
the third conductive island and the fourth conductive island being provided in a second column that is adjacent to the first column,
each of the conductive islands in the first column being offset from each of the conductive islands in the second column,
the first conductive island and the third conductive island thereby being offset in a direction crossing the first column and the second column, and the second conductive island and the fourth conductive island thereby being offset in a direction crossing the first column and the second column,
wherein a dielectric material is disposed over the first semiconductor material and a gate is disposed over the dielectric material.
2. The transistor circuit formation substrate according to claim 1 , the plurality of conductive islands being tessellated over the substrate.
3. The transistor circuit formation substrate according to claim 1 , the plurality of conductive islands being provided in a plurality of columns, each of conductive islands within a column being offset from each of conductive islands within adjacent columns.
4. The transistor circuit formation substrate according to claim 3 , adjacent columns in the series of the plurality of columns being separated by a spaced distance of around 1 to 100 μm.
5. The transistor circuit formation substrate according to claim 3 , individual conductive islands of the plurality of conductive islands in one column of the plurality of columns being separated from adjacent conductive islands in the one column by a spaced distance of around 1 to 100 μm.
6. The transistor circuit formation substrate according to claim 1 , the plurality of conductive islands being provided in a plurality of columns, the plurality of conductive islands in alternate columns being aligned with one another.
7. The transistor circuit formation substrate according to claim 1 , all of the plurality of conductive islands having the same shape.
8. The transistor circuit formation substrate according to claim 1 , the plurality of conductive islands being at least one of rectangular shaped, T-shaped and hexagonal shaped.
9. The transistor circuit formation substrate according to claim 1 , each of the plurality of conductive islands including a gold conductive material.
10. The transistor circuit formation substrate according to claim 1 , a pattern of the plurality of conductive islands being regular and substantially repeated across the substrate.
11. The transistor circuit formation substrate according to claim 1 , each of the first and the second semiconductor materials forming a channel of transistor, the channel width of the transistor being determined by the width of the semiconductor material WA disposed over the spaced distance LY between adjacent conductive islands of the plurality of conductive islands in a column.
12. The transistor circuit formation substrate according to claim 1 , wherein the conductive islands act as electrodes.