Method for fabricating negative temperature coefficient thermistor
A method for fabricating a negative temperature coefficient thermistor is provided, including the steps of: (A) combining ceramic powders having a negative temperature coefficient of resistance, a polymer binder and a solvent to form a mixture; (B) removing the solvent and granulating the mixture to form granulous powders; (C) compressing the granulous powders to obtain a thermistor material with a specific shape; (D) curing the thermistor material at 80° C. to 350° C.; and (E) mounting an electrode to the thermistor material to form the negative temperature coefficient thermistor. The method can be performed in a low temperature without the problem of interface diffusion. Further, the desired resistance value and thermistor constant (B) can be easily adjusted and obtained by mixing ceramic powders with different characteristics of temperature coefficient of resistance and/or the addition of conductive metal powder.
1. A method of fabricating a negative temperature coefficient thermistor, comprising the steps of:
(A) combining powders having a negative temperature coefficient of resistance, a polymer binder and a solvent to form a mixture, wherein an amount of the polymer binder is 1 to 25 wt % based on a total weight of the mixture, and a weight ratio of the solvent to the powders is in a range of 1:1 to 5:1;
(B) removing the solvent and granulating the mixture to form granulous powders;
(C) compressing the granulous powders to obtain a thermistor material with a specific shape;
(D) curing the thermistor material at a temperature of 80° C. to 350° C.; and
(E) mounting an electrode to the thermistor material to form the negative temperature coefficient thermistor.
2. The method of claim 1 , wherein the powders used in the step (A) are oxide powders selected from the group consisting of manganese oxide, cobalt oxide, nickel oxide, copper oxide, and iron oxide.
3. The method of claim 1 , wherein the powders used in the step (A) comprise a mixture of powders with different characteristics of negative temperature coefficient of resistance.
4. The method of claim 1 , wherein a grain size of the powders used in the step (A) is in a range of 0.1 to 120 μm.
5. The method of claim 1 , wherein the mixture in the step (A) further comprises conductive metal powders in an amount of up to 35 wt % based on the total weight of the mixture.
6. The method of claim 5 , wherein the amount of the conductive metal powders used in the step (A) is 5 to 25 wt % based on the total weight of the mixture.
7. The method of claim 5 , wherein the conductive metal powders used in the step (A) are selected from the group consisting of powders of Ag, Au, Pd, Pt, Ru, Cu, Ni, Fe, Zn, Sn, Mo, Ti, Cr, Al, and Pb.
8. The method of claim 5 , wherein the conductive metal powders used in the step (A) are powders of Ag.
9. The method of claim 5 , wherein the conductive metal powders used in the step (A) are powders of Pd.
10. The method of claim 5 , wherein a mean grain size of the conductive metal powders used in the step (A) is in a range of 0.1 to 10 μm.
11. The method of claim 1 , wherein the amount of the polymer binder used in the step (A) is 3 to 15 wt % based on the total weight of the mixture.
12. The method of claim 1 , wherein the polymer binder used in the step (A) is a thermosetting polymer.
13. The method of claim 1 , wherein the polymer binder used in the step (A) is one selected from the group consisting of epoxy resin, polyimide, phenolic resin, polyurethane, melamine, polytetrafluoroethylene, and silicone resin.
14. The method of claim 1 , wherein the polymer binder used in the step (A) is an epoxy resin.
15. The method of claim 1 , wherein the polymer binder used in the step (A) is polyimide.
16. The method of claim 1 , wherein the weight ratio of the solvent to the powders used in the step (A) is in a range of 2:1 to 4:1.
17. The method of claim 1 , wherein the solvent used in the step (A) is acetone.
18. The method of claim 1 , wherein the step (C) is carried out at 1500 to 2000 Kg/cm 2 .
19. The method of claim 1 , wherein the thermistor material in the step (D) is cured at a temperature of 80° C. to 300° C.
20. The method of claim 1 , wherein a room temperature resistance value of the negative temperature coefficient thermistor formed in the step (E) is in a range of 10 kΩ·cm to 20 MΩ·cm.
21. The method of claim 1 , wherein a thermistor constant of the negative temperature coefficient thermistor formed in the step (E) is in a range of 3500 to 4500.