Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers
The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.
1. A method for forming a pattern on a structure, comprising:
condensing a vapor to an amorphous solid condensate layer on a surface of the structure; and
stimulating localized reaction between the solid condensate layer and the structure by directing a focused beam of energy at at least one selected region of the condensate layer, the energy beam being characterized by a beam width that sets a line width of chemical transformation of the structure produced by the simulated reaction.
2. The method of claim 1 further comprising continuing the stimulated localized reaction until the structure surface underlying the condensate layer is exposed at the selected region.
3. The method of claim 1 wherein bulk material of the structure is removed at the selected region by the stimulated localized reaction.
4. The method of claim 1 wherein the structure is etched at the selected region by the stimulated localized reaction.
5. The method of claim 1 wherein a material layer is formed at the selected region by the stimulated localized reaction.
6. The method of claim 1 wherein a thickness characteristic of the formed material layer corresponds to a thickness characteristic of the solid condensate layer, and further comprising measuring the thickness of the solid condensate layer to determine the thickness of the formed material layer.
7. The method of claim 1 wherein the vapor comprises water vapor.
8. The method of claim 7 wherein the solid condensate layer comprises ice.
9. The method of claim 1 wherein the beam of energy comprises an ion beam.
10. The method of claim 1 wherein the beam of energy comprises an electron beam.
11. The method of claim 1 further comprising continuing condensing a vapor to a solid condensate layer during the stimulated localized reaction between the solid condensate layer and the structure.
12. The method of claim 1 wherein the stimulated localized reaction comprises oxidation of the structure.
13. The method of claim 1 wherein the stimulated localized reaction comprises nitridation of the structure.
14. The method of claim 1 wherein the structure comprises a silicon substrate.
15. The method of claim 14 wherein the solid condensate comprises ice.
16. The method of claim 15 wherein the vapor comprises water vapor.
17. The method of claim 14 wherein the vapor comprises zenon difluoride.
18. The method of claim 14 wherein the vapor comprises ammonia.
19. The method of claim 14 further comprising removing the solid condensate layer after the stimulated localized reaction.
20. The method of claim 19 wherein removal of the solid condensate layer comprises conversion of the solid condensate layer to a vapor.
21. The method of claim 20 wherein conversion of the solid condensate layer to a vapor comprises heating the structure to convert the solid condensate layer to a vapor.
22. The method of claim 20 wherein conversion of the solid condensate layer to a vapor comprises sublimation of the condensate layer.
23. The method of claim 1 wherein the structure comprises a membrane.
24. The method of claim 1 wherein the structure comprises a quartz substrate.