Aluminum/silicon carbide composite and radiating part comprising the same
A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies, wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.
1. A base plate for a power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies,
wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangular or a rectangle from which peripheral portions encompassing holes are removed,
wherein a depth of gap of the aluminum-silicon carbide composite is at most 50 μm.
2. The base plate for a power module according to claim 1 , wherein the principal planes, the peripheries of the through holes and the peripheral portion of the base plate each comprises a metal layer containing aluminum as the main component, or a composite of ceramic fiber and a metal containing aluminum as the main component.
3. The base plate for a power module according to claim 1 , wherein the aluminum-silicon carbide composite is exposed in the peripheral portion of the base plate.
4. The base plate for a power module according to claim 1 , wherein the bow of the aluminum-silicon carbide composite is from 0 to 200 μm per 10 cm length and the depth of gap is at most 50 μm, which is produced by subjecting the aluminum-silicon carbide composite to a heating treatment of from 450 to 550° C. for at least 30 seconds under a stress of at least 10 Pa.
5. The base plate for a power module according to claim 1 , wherein the aluminum-silicon carbide composite has a thermal conductivity of at least 180 W/mK and a thermal expansion coefficient of at most 9×10 −6 /K at 150° C.
6. The base plate for a power module according to claim 1 , wherein the change of bow amount of the base plate is at most 30 μm per 10 cm length when the base plate is subjected to 10 cycles of heat cycle in which the base plate is maintained at 350° C. for 10 minutes and naturally cooled at room temperature.
7. The base plate for a power module according to claim 1 , wherein the aluminum-silicon carbide composite is produced by a squeeze casting method.
8. A heat radiation component comprising the base plate for a power module as defined in claim 1 , a Ni film of from 1 to 20 μm thick formed on the base plate for a power module by a Ni-plating treatment, and a ceramic substrate for mounting a semiconductor, bonded to the base plate on which the Ni film is formed.
9. The base plate for a power module according to claim 1 , wherein the flat plate-shaped silicon carbide porous body has a thickness difference of at most 30 μm in the entire porous body.
10. The base plate for a power module according to claim 1 , wherein the aluminum layers each has an average thickness of from 30 to 100 μm.
11. The base plate for a power module according to claim 2 , wherein the principal planes, the peripheries of the through holes and the peripheral portion of the base plate each comprises a metal layer containing aluminum as the main component.
12. The base plate for a power module according to claim 2 , wherein the principal planes, the peripheries of the through holes and the peripheral portion of the base plate each comprises a composite of ceramic fiber and a metal containing aluminum as the main component.
13. A method of making the base plate for a power module of claim 1 , comprising
infiltrating a metal comprising aluminum as the main component into said silicon carbide porous body.