Dielectric composition and multilayer ceramic capacitor embedded low temperature co-fired ceramic substrate using the same
Provided are a dielectric composition and a multi-layer ceramic capacitor embedded low temperature co-fired ceramic substrate using the same. The dielectric composition includes a main component, BaTiO 3 of about 80 wt % or more, and an accessory component, CuBi 2 O 4 and ZnO—B 2 O 3 —SiO 2 -based glass of about 20 wt % or less.
1. A dielectric composition comprising:
a main component, BaTiO 3 of about 80 wt % or more; and
an accessory component, CuBi 2 O 4 and ZnO—B 2 O 3 —SiO 2 -based glass of about 20 wt % or less.
2. The dielectric composition of claim 1 , wherein the content of CuBi 2 O 4 is about 4 wt % to about 10 wt % relative to the total weight of BaTiO 3 .
3. The dielectric composition of claim 1 , wherein the content of ZnO—B 2 O 3 —SiO 2 -based glass is about 1 wt % to about 5 wt % relative to the total weight of BaTiO 3 .
4. The dielectric composition of claim 1 , wherein the content of CuBi 2 O 4 is about 6 wt % relative to a total weight of BaTiO 3 , and the content of ZnO—B 2 O 3 —SiO 2 -based glass is about 4 wt % relative to the total weight of BaTiO 3 .
5. The dielectric composition of claim 1 , wherein the content of ZnO is about 50 wt % to about 90 wt % relative to the total weight of the glass.
6. The dielectric composition of claim 1 , wherein the mean particle diameter of BaTiO 3 is about 500 nm or less.
7. The dielectric composition of claim 1 , wherein a sintering temperature is about 600° C. to about 950° C.
8. A multi-layer ceramic capacitor embedded low temperature co-fired ceramic substrate comprising:
a ceramic laminated body laminated with a plurality of ceramic green sheets printed with a ceramic sheet internal electrode;
a plurality of dielectric layers formed in the ceramic laminated body, the dielectric layers embedded with a multi-layer ceramic capacitor comprising a dielectric composition comprising a main component, BaTiO 3 of about 80 wt % or more and an accessory component, CuBi 2 O 4 and ZnO—B 2 O 3 —SiO 2 -based glass of about 20 wt % or less; and
a plurality of capacitor internal electrodes formed between the dielectric layers, and electrically connected to the ceramic sheet internal electrode.
9. The multi-layer ceramic capacitor embedded low temperature co-fired ceramic substrate of claim 8 , wherein the content of CuBi 2 O 4 is about 4 wt % to about 10 wt % relative to the total weight of BaTiO 3 .
10. The multi-layer ceramic capacitor embedded low temperature co-fired ceramic substrate of claim 8 , wherein the content of ZnO—B 2 O 3 —SiO 2 -based glass is about 1 wt % to about 5 wt % relative to the total weight of BaTiO 3 .
11. The multi-layer ceramic capacitor embedded low temperature co-fired ceramic substrate of claim 8 , wherein the ceramic sheet internal electrode comprises one of Ag and Cu.
12. The multi-layer ceramic capacitor embedded low temperature co-fired ceramic substrate of claim 8 , wherein a firing temperature is about 600° C. to about 950° C.