Semiconductor device including n-type and p-type FinFET's constituting an inverter structure
A semiconductor device according to an aspect of the invention comprises an n-type FinFET which is provided on a semiconductor substrate and which includes a first fin, a first gate electrode crossing a channel region of the first fin via a gate insulating film in three dimensions, and contact regions provided at both end of the first fin, a p-type FinFET which is provided on the semiconductor substrate and which includes a second fin, a second gate electrode crossing a channel region of the second fin via a gate insulating film in three dimensions, and contact regions provided at both end of the second fin, wherein the n- and the p-type FinFET constitute an inverter circuit, and the fin width of the contact region of the p-type FinFET is greater than the fin width of the channel region of the n-type FinFET.
1. A semiconductor device comprising:
a semiconductor substrate;
an n-type FinFET which is provided on the semiconductor substrate and which includes a first fin acting as an active region, a first gate electrode crossing a channel region of the first fin via a gate insulating film in three dimensions, and contact regions provided at one end and the other end of the first fin and sandwiching the channel region;
a p-type FinFET which is provided on the semiconductor substrate and which includes a second fin acting as an active region, a second gate electrode crossing a channel region of the second fin via a gate insulating film in three dimensions, and contact regions provided at one end and the other end of the second fin and sandwiching the channel region,
wherein the n-type FinFET and the p-type FinFET constitute an inverter circuit, and
a channel width of the p-type FinFET is equal to a channel width of the n-type FinFET,
the fin width of the contact region of the p-type FinFET to act as an output node of the inverter circuit is greater than the fin width of the channel region of the n-type FinFET,
a dimension in a direction parallel to a source-drain direction of the contact region, which acts as the output node of the inverter circuit, of the p-type FinFET is greater than a dimension in a direction parallel to a source-drain direction of the contact region, which acts as the output node of the inverter circuit, of the n-type FinFET, and
the fin width of the channel region of the p-type FinFET is greater than the fin width of the channel region of the n-type FinFET.
2. The semiconductor device according to claim 1 , wherein the impurity concentration of the channel region of the p-type FinFET is higher than the impurity concentration of the channel region of the n-type FinFET.
3. The semiconductor device according to claim 1 , further comprising an n-well region provided in the semiconductor substrate,
wherein the p-type FinFET is provided in the n-well region and a bias voltage is applied to the n-well region.
4. The semiconductor device according to claim 1 , wherein the semiconductor substrate is composed of an SOI region and a bulk region and the n-type FinFET is arranged in the SOI region and the p-type FinFET is arranged in the bulk region.
5. The semiconductor device according to claim 1 , wherein the channel plane of the n-type FinFET is an Si (100) plane and the channel plane of the p-type FinFET is an Si (110) plane.