Semiconductor device and a method of manufacturing the same
Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
1. A semiconductor device, comprising:
a first group of transistors formed on a semiconductor substrate; and
a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of said transistors in said first group;
wherein,
each of said transistors in said first group includes a first gate electrode on said semiconductor substrate with a first gate insulating film therebetween, and a silicide layer on said first gate electrode;
each of said transistors in said second group includes a second gate electrode on said substrate and within an insulating film above said semiconductor substrate;
each of said first gate electrodes of said first group of transistors has a height that is less than a height of each of said second gate electrodes of said second group of transistors;
a protective film covers said silicide layers on said first gate electrodes of said first group of transistors, each of the first gate electrodes of said first group of transistors being covered by the same protective film; and
a surface of said insulating film within which are located said second group of transistors, and a surface of said protective film have (a) substantially a same height and (b) a flat surface-like shape.