Semiconductor encapsulating epoxy resin composition and semiconductor device
Epoxy resin compositions comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) an inorganic filler, (D) a rare earth oxide, and optionally (E) a phosphazene compound cure into products having improved heat resistance and moisture-proof reliability and are best suited for the encapsulation of semiconductor devices.
1. A semiconductor encapsulating, flame retardant epoxy resin composition comprising
(A) a non-brominated aromatic ring-containing epoxy resin selected from the group consisting of novolac type epoxy resins, cresol novolac type epoxy resins, triphenolalkane type epoxy resins, aralkyl type epoxy resins, biphenyl skeleton-containing aralkyl type epoxy resins, biphenyl type epoxy resins, naphthalene ring-containing epoxy resins, bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, and stilbene type epoxy resins,
(B) a phenolic resin curing agent in an amount to provide 0.5 to 1.5 moles of phenolic hydroxyl groups per mole of epoxy groups in the epoxy resin (A),
(C) an inorganic filler in an amount of 400 to 1,200 parts by weight per 100 parts by weight of components (A), (B) and (E) combined,
(D) a rare earth oxide in an amount of 2 to 10 parts by weight per 100 parts by weight of components (A) and (B) combined, wherein said rare earth oxide (D) is selected from the class consisting of lanthanum oxide, gadolinium oxide, yttrium oxide, and mixtures thereof, and
(E) a flame retardant compound consisting of a phosphazene compound, in an amount of 2 to 20% by weight based on the total weight of components (A), (B) and (E) combined, wherein said phosphazene compound has the average compositional formula (1):
wherein X is a single bond or a group selected from among CH 2 , C(CH 3 ) 2 , SO 2 , S, O, and O(CO)O, Y is OH, SH or NH 2 , R 1 is a group selected from among C 1 -C 4 alkyl and alkoxy groups, NH 2 , NR 2 R 3 and SR 4 , wherein each of R 2 , R 3 and R 4 is a hydrogen atom or C 1 -C 4 alkyl group, d, e, f and n are numbers satisfying 0≦d≦0.25n, 0≦e≦2n, 0≦f≦2n, 2d+e+f=2n, and 3≦n≦1,000.
2. The epoxy resin composition of claim 1 which is substantially free of bromides and antimony compounds.
3. The epoxy resin composition of claim 1 further comprising a curing accelerator in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A), (B) and (E) combined.
4. The epoxy resin composition of claim 1 further comprising a parting agent in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A), (B) and (E) combined.
5. The epoxy resin composition of claim 1 further comprising a silane coupling agent in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A), (B) and (E) combined.
6. The epoxy resin composition of claim 1 , wherein said epoxy resin has a sodium content of up to 10 ppm, a potassium content of up to 10 ppm, and a hydrolyzable chlorine content of up to 1000 ppm.
7. A semiconductor device encapsulated with an epoxy resin composition comprising
(A) a non-brominated aromatic ring-containing epoxy resin selected from the group consisting of novolac type epoxy resins, cresol novolac type epoxy resins, triphenolalkane type epoxy resins, aralkyl type epoxy resins, biphenyl skeleton-containing aralkyl type epoxy resins, biphenyl type epoxy resins, naphthalene ring-containing epoxy resins, bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, and stilbene type epoxy resins,
(B) a phenolic resin curing agent in an amount to provide 0.5 to 1.5 moles of phenolic hydroxyl groups per mole of epoxy groups in the epoxy resin (A),
(C) an inorganic filler in an amount of 400 to 1,200 parts by weight per 100 parts by weight of components (A), (B) and (E) combined,
(D) a rare earth oxide in an amount of 2 to 10 parts by weight per 100 parts by weight of components (A) and (B) combined, wherein said rare earth oxide (D) is selected from the class consisting of lanthanum oxide, gadolinium oxide, yttrium oxide, and mixtures thereof, and
(E) a flame retardant compound consisting of a phosphazene compound, in an amount of 2 to 20% by weight based on the total weight of components (A), (B) and (E) combined, wherein said phosphazene compound has the average compositional formula (1):
wherein X is a single bond or a group selected from among CH 2 , C(CH 3 ) 2 , SO 2 , S, O, and O(CO)O, Y is OH, SH or NH 2 , R 1 is a group selected from among C 1 -C 4 alkyl and alkoxy groups, NH 2 , NR 2 R 3 and SR 4 , wherein each of R 2 , R 3 and R 4 is a hydrogen atom or C 1 -C 4 alkyl group, d, e, f and n are numbers satisfying 0≦d≦0.25n, 0≦e≦2n, 0≦f≦2n, 2d+e+f=2n, and 3≦n≦1,000
in a cured state.