Semiconductor memory device including FET memory elements

1. A semiconductor memory device comprising:

a memory cell including a memory element including a first field effect transistor having a gate insulating film made of a ferroelectric film, and a selection switching element including a second field effect transistor having a gate insulating film made of a paraelectric film;

a load element for a read operation connected in series to the memory cell; and

a first gate electrode of the first field effect transistor is provided on the ferroelectric film, a second gate electrode of the second field effect transistor is provided on the paraelectric film, and a source electrode and a drain electrode are provided on a major surface of the semiconductor film,

wherein the ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween,

the semiconductor film forms a common channel shared by the first field effect transistor and the second field effect transistor,

the load element includes a third field effect transistor having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film, and

data is written into the memory element by applying a predetermined voltage to the second gate electrode to cause the selection switching element to go to an ON state, and applying a predetermined voltage between the first gate electrode and the drain electrode, to change a polarization state of the ferroelectric film.

2. The semiconductor memory device of claim 1 , wherein

data is read from the memory element by applying a predetermined voltage to the second gate electrode to cause the selection switching element to go to the ON state, and applying a predetermined voltage between the source electrode and the drain electrode, to detect a change in channel conductivity depending on the polarization state of the ferroelectric film, by detecting an intermediate potential between the memory element and the load element.

3. A semiconductor memory device comprising:

a memory cell including a memory element including a first field effect transistor having a gate insulating film made of a ferroelectric film, and a selection switching element including a second field effect transistor having a gate insulating film made of a paraelectric film; and

a load element for a read operation connected in series to the memory cell,

wherein the ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween,

the semiconductor film forms a common channel shared by the first field effect transistor and the second field effect transistor,

the load element includes a third field effect transistor having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film,

the memory element has an OFF resistance value providing a low channel conductivity corresponding to a first polarization state of the ferroelectric film, and an ON resistance value providing a high channel conductivity corresponding to a second polarization state of the ferroelectric film, and

a resistance value of the load element is set to any value between the OFF resistance value and the ON resistance value of the memory element.

4. The semiconductor memory device of claim 3 , wherein

the load element includes the third field effect transistor, and

the resistance value of the load element is set to any value between the OFF resistance value and the ON resistance value of the memory element, by applying a predetermined voltage to a third gate electrode of the third field effect transistor.

5. The semiconductor memory device of claim 3 , wherein

the load element includes the third field effect transistor, and

the resistance value of the load element is set to any value between the OFF resistance value and the ON resistance value of the memory element, by setting a ratio of a gate capacitance value of the first field effect transistor and a gate capacitance value of the third field effect transistor to a predetermined value.

6. The semiconductor memory device of claim 1 , wherein the semiconductor film is made of an oxide semiconductor.

7. The semiconductor memory device of claim 1 , wherein

the memory cells are arranged in a matrix,

first gate electrodes of the first field effect transistors on each row are connected to a first word line;

second gate electrodes of the second field effect transistors on each row are connected to a second word line,

the source electrodes are connected to a source line,

the drain electrodes on each column are connected to a bit line, and

data is written into each memory element on a selected row by applying a write pulse and a predetermined voltage to the first word line and the second word line on the selected row, and applying a predetermined voltage corresponding to write data to each bit line.

8. The semiconductor memory device of claim 7 , wherein

the load element is connected to a bit line provided for each column, and

data is read from each a memory element on a selected row by applying a predetermined voltage to the second word line on the selected row, and applying a read pulse to each bit line, to detect an intermediate potential between each load element connected to the each bit line and the memory element.

9. A semiconductor memory device comprising:

a memory element including a first field effect transistor having a gate insulating film made of a ferroelectric film; and

a load element for a read operation including a second field effect transistor having a gate insulating film made of a paraelectric film, and connected in series to the memory element,

wherein the ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween, and

the semiconductor film forms a common channel shared by the first field effect transistor and the second field effect transistor.