LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device
There is disclosed a liquid crystal display device that is adaptive for preventing the driving device defect of a driving circuit part and a method of fabricating the same. A liquid crystal display device according to an embodiment of the present invention includes a driving device of a structure that a plurality of thin film transistor having a channel of poly silicon are connected in parallel, in a driving circuit, and wherein at least one of widths of the channels and distances between the adjacent channels is different in accordance with their location.
1. A liquid crystal display device, comprising:
a driving device of a structure that a plurality of thin film transistor having a channel of poly silicon are connected in parallel, in a driving circuit, wherein the driving device comprises an active layer formed to have a plurality of channels which are formed on a buffer film that is formed on a substrate, a gate electrode formed to overlap with the active layer and a gate insulating film therebetween, and a source electrode and a drain electrode being in contact with the active layer with the gate electrode and an intermediate insulating film therebetween;
a hole exposing at least one of a substrate and the buffer film between the adjacent channels; and
a heat conductive material formed between the adjacent channels of the driving device and close to the channel to transmit the heat generated at the channel, wherein the heat conductive material is in contact with the buffer film through the hole and is formed on the entire surface of the driving device to protect the driving device.
2. The liquid crystal display device according to claim 1 , wherein the heat conductive material includes SiNx.
3. The liquid crystal display device according to claim 1 , wherein the heat conductive material has a heat conductivity of about 16 to 22 W/mK.
4. A fabricating method of a liquid crystal display device, comprising:
forming in a driving circuit a driving device of a structure that a plurality of thin film transistors are connected in parallel, wherein the thin film transistor has a channel of poly silicon and wherein forming the driving device comprises forming an active layer having a plurality of channels on a buffer film which is formed on a substrate, forming a gate electrode to overlap with the active layer and a gate insulating film therebetween; and forming a source electrode and a drain electrode being in contact with the active layer with the gate electrode and an intermediate insulating film therebetween;
forming a hole exposing at least one of a substrate and the buffer film between the adjacent channels; and
forming a heat conductive material between the adjacent channels of the driving device and close to the channel, to absorb the heat generated at the channel, wherein the heat conductive material is in contact with the buffer film through the hole and is formed on the entire surface of the driving device.
5. The fabricating method according to claim 4 , wherein the heat conductive material includes SiNx.
6. The fabricating method according to claim 4 , wherein the heat conductive material has a heat conductivity of approximately 16 to 22 W/mK.