Scribe line structure for wafer dicing and method of making the same
The scribe line structure for wafer dicing according to the present invention includes a plurality of metal structures arranged up-and-down on a substrate in a dielectric layer, and an upper one of the metal structures has a lower metal density than a lower one of the metal structures. In another aspect, the scribe line structure for wafer dicing includes a plurality of metal structures arranged up-and-down on a substrate in a dielectric layer, and each of the metal structures has a lower metal density on a dicing path for the wafer dicing than not on the dicing path. The scribe line structure can effectively avoid interlayer delamination or peeling issue caused by a dicing process, especially on a low-k/Cu wafer.
1. A scribe line structure for wafer dicing, comprising:
a substrate;
a dielectric layer disposed on the substrate; and
a plurality of metal structures arranged up-and-down on the substrate in the dielectric layer, wherein an upper one of the metal structures has a lower metal density than a lower one of the metal structures, there is a vertical distance between two successive ones of the metal structures, no other metal structure is disposed between the two successive ones of the metal structures, and at least one of the metal structures comprises a first metal layer having at least three slots parallel to a dicing direction.
2. The scribe line structure for wafer dicing of claim 1 , wherein the lower metal density is attained by allowing the upper one of the metal structures to be the at least one of the metal structures or to comprise a second metal layer having a plurality of slots parallel to a dicing direction, and the upper one of the metal structures has the lower metal density than the lower one of the metal structures.
3. The scribe line structure for wafer dicing of claim 1 , wherein each of the metal structures comprises a plurality of metal vias, and the upper one of the metal structures has the lower metal density than the lower one of the metal structures.
4. The scribe line structure for wafer dicing of claim 1 , wherein each of the metal structures comprises a plurality of metal vias and a third or the first metal layer, and the third or first metal layer is on or beneath the plurality of metal vias.
5. The scribe line structure for wafer dicing of claim 1 , wherein the lower portion of the dielectric layer comprises a low-k dielectric material.
6. A scribe line structure for wafer dicing, comprising:
a substrate;
a dielectric layer disposed on the substrate; and
a plurality of metal structures arranged up-and-down on the substrate in the dielectric layer, wherein an upper one of the metal structures has a lower metal density than a lower one of the metal structures, there is a vertical distance between two successive ones of the metal structures, and no other metal structure is disposed between the two successive ones of the metal structures, each of the metal structures comprises a metal layer having one or a plurality of slots parallel to a dicing direction, and the number of the slot or slots of each of the metal structures is different from each other.