Semiconductor memory device and method of performing a memory operation

1. A method of performing a memory operation in a semiconductor memory device, comprising:

receiving a write command signal from a memory controller;

receiving data from the memory controller, the data including n pieces of data, wherein a k-th piece of the pieces of data comprises masking data to be masked; and

receiving a data masking signal from the memory controller, the data masking signal enabling data masking, wherein the data masking signal is used to mask the k-th piece of data,

wherein a latency between receiving the write command signal and receiving the data masking signal is less than a latency between receiving the write command signal and receiving the k-th piece of data.

2. The method of claim 1 , further comprising:

receiving a clock signal, wherein the latency between receiving the write command signal and receiving the data masking signal is at least 0.5 clock cycles less than the latency between receiving the write command signal and receiving the k-th piece of data.

3. The method of claim 1 , further comprising:

in response to the write command signal and the data masking signal, blocking the k-th piece of data so it is not written into a memory cell array, and writing only remaining data of the received data into the memory cell array.

4. The method of claim 1 , wherein the write command signal, the data masking signal, and the k-th piece of data are input to the memory device in the following sequential order: (1) write command signal; (2) data masking signal; (3) k-th piece of data.

5. A method of controlling a semiconductor memory device, comprising:

transmitting a write command signal to the semiconductor memory device;

transmitting data to the semiconductor memory device, the data including n pieces of data, wherein a k-th piece of the n pieces of data comprises masking data to be masked; and

transmitting a data masking signal to the semiconductor memory device, the data masking signal enabling data masking, wherein the data masking signal is used to mask the k-th piece of data,

wherein transmission of the data masking signal begins prior to transmission of the k-th piece of data.

6. The method of claim 5 , further comprising:

transmitting a clock signal, wherein the transmission of the data masking signal begins at least 0.5 clock cycles prior to the transmission of the k-th piece of data.

7. The method of claim 5 , further comprising:

in response to the write command signal and the data masking signal, blocking the k-th piece of data so it is not written into a memory cell array, and writing only remaining data of the transmitted data into the memory cell array.

8. The method of claim 5 , wherein the write command signal, the data masking signal, and the k-th piece of data are transmitted to the semiconductor memory device in the following sequential order: (1) write command signal; (2) data masking signal; (3) k-th piece of data.

9. A semiconductor memory device, comprising:

a memory cell array;

a command receiving circuit configured to receive a write command signal from a memory controller;

a data receiving circuit configured to receive data from the memory controller, the data including n pieces of data, wherein a k-th piece of the n pieces of data comprises masking data to be masked;

a data masking signal receiving circuit configured to receive a data masking signal from the memory controller, the data masking signal enabling data masking, wherein the data masking signal is used to mask the k-th piece of data; and

wherein a latency between receiving the write command signal and receiving the data masking signal is less than a latency between receiving the write command signal and receiving the k-th piece of data, and

wherein the data masking information receiving circuit comprises a flip-flop circuit configured to adjust the latency for the data masking signal.

10. The semiconductor memory device of claim 9 , wherein:

the flip-flop circuit is configured to adjust the latency for the data masking signal after the data receiving circuit begins to receive the data.

11. The semiconductor memory device of claim 10 , wherein the flip-flop circuit is configured to adjust the latency between receiving the write command and receiving the data masking signal, so that it equals the latency between receiving the write command and receiving the k-th piece of data.

12. The semiconductor memory device of claim 9 , further comprising:

a column selection line enable signal generation circuit configured to perform a logical operation on a column selection line enable master signal, an output signal of the flip flop and a column address signal and generate a column selection line enable signal.

13. The semiconductor memory device of claim 9 , further comprising:

a data write circuit configured to block the k-th piece of data so it is not written into a memory cell array, and to write only remaining data of the received data into the memory cell array, in response to the write command signal and the data masking signal.

14. A memory controller, comprising:

a command transmitting circuit configured to transmit a write command signal to a memory device;

a data transmitting circuit configured to transmit data to the memory device, the data including n pieces of data, wherein a k-th piece of the n pieces of data is masking data to be masked; and

a data masking signal transmitting circuit configured to transmit a data masking signal to the memory device, the data masking signal enabling data masking, wherein the data masking information is used to mask the k-th piece of data; and

wherein the memory controller is configured to begin transmitting the data masking signal prior to beginning transmission of the k-th piece of data.

15. The memory controller of claim 14 , wherein the memory controller is configured to transmit the write command signal, the data masking signal, and the k-th piece of data to the semiconductor memory device in the following sequential order: (1) write command signal; (2) data masking signal; (3) k-th piece of data.

16. The memory controller of claim 15 , further comprising:

a latency controller configured to control a latency of the data masking signal and a latency of the k-th piece data to have different latencies.