IP Library Granted Patent US 8,017,437
Granted Patent B2
US 8,017,437 · App. 12/591,791 · Granted Sep 13, 2011

Method for manufacturing a semiconductor package

Assignee: Samsung Electro—Mechanics Co., Ltd.
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Quick Facts
Patent No.
US 8,017,437
App. No.
12/591,791
Granted
Sep 13, 2011
Kind
B2
Abstract

A method of manufacturing a semiconductor package which includes mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon; forming at least one bump by performing soldering, on at least one predetermined position electrically connected with the pattern formed on the first substrate; forming a first molding by performing molding, such that the first molding covers the first substrate and the first chip; placing an interposer on the first molding; and placing a second substrate on the interposer, the second substrate having a second chip mounted thereon.

Claims (30)

1. A method of manufacturing a semiconductor package, the method comprising:

mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon;

forming at least one bump by performing soldering, on at least one predetermined position electrically connected with the pattern formed on the first substrate;

forming a first molding by performing molding, such that the first molding covers the first substrate and the first chip;

placing an interposer on the first molding; and

placing a second substrate on the interposer, the second substrate having a second chip mounted thereon,

wherein the bump penetrates the first molding so as to be electrically connected with the interposer, and

the second substrate is placed on the interposer with at least one conductive ball positioned in-between.

2. The method of claim 1 , further comprising, after forming the first molding:

grinding a portion of the first molding.

3. The method of claim 1 , wherein the interposer is a metal oxide layer.

4. The method of claim 3 , wherein the interposer is made of aluminum oxide (Al 2 O 3 ).

5. The method of claim 3 , further comprising:

coupling a plurality of conductive balls onto the other side of the first substrate.

6. The method of claim 3 , further comprising:

mounting at least one passive component on one side of the first substrate.

7. A method of manufacturing a semiconductor package, the method comprising:

mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon;

forming at least one bump by performing soldering, on at least one predetermined position electrically connected with the pattern formed on the first substrate;

forming a first molding by performing molding, such that the first molding covers the first substrate and the first chip;

grinding a portion of the first molding;

placing an interposer on the first molding; and

placing a second substrate on the interposer, the second substrate having a second chip mounted thereon.

8. A method of manufacturing a semiconductor package, the method comprising:

mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon;

forming at least one bump by performing soldering, on at least one predetermined position electrically connected with the pattern formed on the first substrate;

forming a first molding by performing molding, such that the first molding covers the first substrate and the first chip;

placing an interposer comprising a metal oxide layer on the first molding;

placing a second substrate on the interposer, the second substrate having a second chip mounted thereon; and

mounting at least one passive component on one side of the first substrate.

Priority Claims (1)
KR 10-2007-0057147 · Jun 12, 2007 · national
Continuity (2)
Division 12068867 · Feb 12, 2008
Related Publication 20100087035A1 · Apr 8, 2010