Method for manufacturing semiconductor device
View Patent ↗A chip provided with a layer for separation of a surface region and a hydrophilic surface is manufactured. One or both of a hydrophilic region and a hydrophobic region are formed on a substrate surface where the chip is placed. Liquid is dropped onto the hydrophilic region on the substrate surface, and the chip is placed thereon. The substrate and the chip are heated while being pressure-bonded so that the chip is fixed on the substrate surface, and then the surface region of the chip is separated. By providing a liquid layer in a position where the chip is placed, the chip can be placed on the substrate with high accuracy and thus productivity can be increased.
1. A method for manufacturing a semiconductor device, comprising the steps of:
irradiating a first substrate with ions to form a layer including the ions in the first substrate;
dividing the first substrate into a plurality of second substrates;
dropping liquid including water to form a liquid film on a hydrophilic region over a third substrate;
putting one second substrate of the plurality of second substrates on the liquid film;
attaching the one second substrate of the plurality of second substrates on the hydrophilic region;
separating the one of the plurality of second substrates along the layer including the ions by heat treatment to form a semiconductor layer over the third substrate; and
forming a circuit by using the semiconductor layer.
2. The method for manufacturing a semiconductor device, according to claim 1 , wherein the liquid includes any of ethyl alcohol, methyl alcohol, isopropyl alcohol, hydrogen fluoride, hydrogen peroxide, and ammonia.
3. The method for manufacturing a semiconductor device, according to claim 1 , wherein the semiconductor layer comprises single crystal silicon.
4. The method for manufacturing a semiconductor device, according to claim 1 , wherein the one second substrate of the plurality of second substrates is attached on the hydrophilic region by performing pressure-bonding on the second substrate while heating the second substrate.
5. A method for manufacturing a semiconductor device, comprising the steps of:
forming a hydrophilic region over a first substrate;
dropping liquid including water to form a liquid film on the hydrophilic region;
putting a second substrate on the liquid film;
attaching the second substrate on the hydrophilic region wherein a layer including ions is formed in the second substrate;
separating the second substrate along the layer including ions by heat treatment to form a semiconductor layer over the first substrate; and
forming a circuit by using the semiconductor layer.
6. The method for manufacturing a semiconductor device, according to claim 5 , wherein the liquid includes any of ethyl alcohol, methyl alcohol, isopropyl alcohol, hydrogen fluoride, hydrogen peroxide, and ammonia.
7. The method for manufacturing a semiconductor device, according to claim 5 , wherein the semiconductor layer comprises single crystal silicon.
8. The method for manufacturing a semiconductor device, according to claim 5 , wherein the second substrate is attached on the hydrophilic region by performing pressure-bonding on the second substrate while heating the second substrate.
9. A method for manufacturing a semiconductor device, comprising the steps of:
forming a separation layer over first substrate;
forming a semiconductor layer over the separation layer;
forming a circuit by using the semiconductor layer;
forming a flat hydrophilic surface over the circuit;
forming a hydrophilic region over a second substrate;
dropping liquid including water on the hydrophilic region to form a liquid film on the hydrophilic region;
putting the first substrate on the liquid film;
attaching the first substrate to the second substrate so that the flat hydrophilic surface is in contact with the hydrophilic region; and
separating the first substrate along the separation layer so that the circuit is left over the second substrate.
10. The method for manufacturing a semiconductor device, according to claim 9 , wherein the liquid includes any of ethyl alcohol, methyl alcohol, isopropyl alcohol, hydrogen fluoride, hydrogen peroxide, and ammonia.
11. The method for manufacturing a semiconductor device, according to claim 9 , wherein the semiconductor layer comprises single crystal silicon.
12. The method for manufacturing a semiconductor device, according to claim 9 , wherein the second substrate is attached to the second substrate by performing pressure-bonding on the second substrate while heating the second substrate.
13. A method for manufacturing a semiconductor device, comprising the steps of:
forming a hydrophilic region over a first substrate;
dropping liquid including water on the hydrophilic region to form a liquid film on the hydrophilic region;
putting a second substrate on the liquid film wherein the second substrate is provided with a separation layer, a circuit formed by using a semiconductor layer over the separation layer and a flat hydrophilic surface over the circuit;
attaching the second substrate on the hydrophilic region; and
separating the second substrate along the separation layer so that the circuit is left over the first substrate.
14. The method for manufacturing a semiconductor device, according to claim 13 , wherein the liquid includes any of ethyl alcohol, methyl alcohol, isopropyl alcohol, hydrogen fluoride, hydrogen peroxide, and ammonia.
15. The method for manufacturing a semiconductor device, according to claim 13 , wherein the semiconductor layer comprises single crystal silicon.
16. The method for manufacturing a semiconductor device, according to claim 13 , wherein the second substrate is attached on the hydrophilic region by performing pressure-bonding on the second substrate while heating the second substrate.