Biosensor devices and method for fabricating the same

1. A biosensor device, comprising:

an interconnect structure;

a first semiconductor layer formed over the interconnect structure;

a plurality of detection elements formed in the first semiconductor layer;

an optical filter layer formed over and physically contacting the first semiconductor layer;

a second semiconductor layer formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer;

a plurality of isolation walls formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements;

an immobilization layer formed over the second semiconductor layer exposed by the micro-wells; and

a plurality of capture molecules formed over the immobilization layer in the mirco-wells.

2. The biosensor device as claimed in claim 1 , wherein the isolation wall elements, the second semiconductor layer, the optical filter layer, and the first semiconductor layer are portions of a semiconductor on insulator (SOI) substrate.

3. The biosensor device as claimed in claim 1 , wherein the optical filter layer is a dielectric interference filter having a layer sequence comprising silicon dioxide and silicon nitride.

4. The biosensor device as claimed in claim 1 , wherein the detection elements are CCD, CIS or optical MEMS devices.

5. The biosensor device as claimed in claim 1 , wherein the capture molecules comprise DNA half strands, nucleic acids, peptides, or proteins.

6. The biosensor device as claimed in claim 1 , wherein the immobilization layer comprises gold and has a thickness of about 5˜10 nm.

7. The biosensor device as claimed in claim 1 , wherein the micro-wells have a depth of about 20˜50 μm from a top surface of the isolation walls to a top surface of the second semiconductor layer exposed by the micro-wells.

8. A biosensor device, comprising:

an interconnect structure;

a first semiconductor layer formed over the interconnect structure, having opposing first and second surfaces, wherein the first surface physically contacts the interconnect structure;

a plurality of detection elements formed in the first semiconductor layer from the first surface thereof;

a plurality of isolation walls formed over the second surface of the first semiconductor layer, defining a plurality of micro-wells over the first semiconductor layer, wherein the isolation walls and the first semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements;

an optical filter layer conformably formed over the isolation walls and the second surface of the first semiconductor layer;

an immobilization layer formed over a portion of the optical filter layer exposed by the micro-wells; and

a plurality of capture molecules formed over the immobilization layer in the micro-wells.

9. The biosensor device as claimed in claim 8 , wherein the first semiconductor layer comprises silicon.

10. The biosensor device as claimed in claim 8 , wherein the optical filter layer is a dielectric interference filter having a layer sequence comprising silicon dioxide and silicon nitride.

11. The biosensor device as claimed in claim 8 , wherein the detection elements comprise CCD, CIS or optical MEMS devices.

12. The biosensor device as claimed in claim 8 , wherein the capture molecules comprise DNA half strands, nucleic acids, peptides, or proteins.

13. The biosensor device as claimed in claim 8 , wherein the immobilization layer comprises gold and has a thickness of about 5˜10 nm.

14. The biosensor device as claimed in claim 8 , wherein the micro-wells have a depth of about 20˜50 μm from a top surface of the isolation walls to the first semiconductor layer exposed by the micro-wells.

15. A biosensor device, comprising:

an interconnect structure;

a semiconductor substrate formed over the interconnect structure, having opposing first and second surfaces, wherein the first surface physically contacts the interconnect structure;

a plurality of detection elements formed in the semiconductor substrate from the first surface thereof;

a plurality of isolation walls formed over the second surface of the semiconductor substrate, defining a plurality of micro-wells over the semiconductor substrate, wherein the isolation walls and the semiconductor substrate comprises the same material, and the micro-wells are correspondingly arranged with the detection elements;

an immobilization layer formed over a portion of the second surface of the semiconductor substrate exposed by the micro-wells;

a plurality of capture molecules formed over the immobilization layer in the micro-wells; and

an optical filter layer formed between the immobilization layer and the detection elements.

16. The biosensor device as claimed in claim 15 , wherein the semiconductor substrate is a bulk semiconductor substrate.

17. The biosensor device as claimed in claim 16 , wherein the optical filter layer is formed on the second surface of the semiconductor substrate exposed by the micro-wells, and the immobilization layer is formed on the optical filter layer.

18. The biosensor device as claimed in claim 15 , wherein the semiconductor substrate is a semiconductor on insulator (SOI) substrate.

19. The biosensor device as claimed in claim 18 , wherein the optical filter layer is integrated in the SOI substrate, and the immobilization layer is formed on the second surface of the SOI substrate.