Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device
View Patent ↗It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
1. A method for forming a layer having functionality, comprising the steps of:
forming a peeling layer comprising a silane coupling agent over a substrate;
forming the layer having functionality over the peeling layer; and
peeling the layer having functionality from the substrate.
2. A method for forming a layer having functionality, comprising the steps of:
forming a peeling layer in which oxygen and silicon are combined and an inactive group is combined with the silicon over a substrate;
forming a layer having functionality over the peeling layer; and
peeling the layer having functionality from the substrate at a portion including the peeling layer or at a boundary between the peeling layer and the layer having functionality.
3. A method for forming a layer having functionality according to claim 1 , further comprising:
attaching an adhesive to the layer having functionality after forming the layer having functionality.
4. A method for forming a layer having functionality according to claim 2 , further comprising:
attaching an adhesive to the layer having functionality after forming the layer having functionality.
5. A method for forming a layer having functionality according to claim 2 , further comprising:
removing a remaining peeling layer after peeling the layer having functionality.
6. A method for forming a layer having functionality according to claim 1 , wherein the layer having functionality comprises a conductive layer and an insulating layer covering the conductive layer.
7. A method for forming a layer having functionality according to claim 2 , wherein the layer having functionality comprises a conductive layer and an insulating layer covering the conductive layer.
8. A method for forming a layer having functionality according to claim 6 , wherein the conductive layer is an antenna.
9. A method for forming a layer having functionality according to claim 7 , wherein the conductive layer is an antenna.
10. A method for forming a layer having functionality according to claim 6 , wherein the conductive layer is a pixel electrode.
11. A method for forming a layer having functionality according to claim 7 , wherein the conductive layer is a pixel electrode.
12. A method for forming a layer having functionality according to claim 1 , wherein the layer having functionality comprises a colored layer.
13. A method for forming a layer having functionality according to claim 2 , wherein the layer having functionality comprises a colored layer.
14. A method for forming a layer having functionality according to claim 1 , wherein the peeling layer is formed by coating with the silane coupling agent.
15. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer comprising a silane coupling agent over a substrate;
forming a conductive layer over the peeling layer;
forming an insulating layer covering the conductive layer;
peeling the conductive layer and the insulating layer from the substrate; and
electrically connecting the conductive layer and a connection terminal of an integrated circuit.
16. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer in which oxygen and silicon are combined and an inactive group is combined with the silicon over a substrate;
forming a conductive layer over the peeling layer;
forming an insulating layer covering the conductive layer;
peeling the conductive layer and the insulating layer from the substrate at a portion including the peeling layer or at a boundary between the peeling layer and the conductive layer; and
connecting the conductive layer and a connection terminal of an integrated circuit electrically with each other.
17. A method for manufacturing a semiconductor device according to claim 15 , further comprising:
attaching an adhesive to the insulating layer after forming the insulating layer.
18. A method for manufacturing a semiconductor device according to claim 16 , further comprising:
attaching an adhesive to the insulating layer after forming the insulating layer.
19. A method for manufacturing a semiconductor device according to claim 16 , further comprising:
removing a remaining peeling layer after peeling the conductive layer and the insulating layer.
20. A method for manufacturing a semiconductor device according to claim 15 , wherein the conductive layer is an antenna.
21. A method for manufacturing a semiconductor device according to claim 16 , wherein the conductive layer is an antenna.
22. A method for manufacturing a semiconductor device according to claim 15 , wherein the peeling layer is formed by coating with the silane coupling agent.
23. A method for manufacturing a semiconductor device according to claim 15 , further comprising:
attaching a flexible substrate having an opening to the conductive layer and the insulating layer.
24. A method for manufacturing a semiconductor device according to claim 16 , further comprising:
attaching a flexible substrate having an opening to the conductive layer and the insulating layer.
25. A method for manufacturing a semiconductor device according to claim 23 , wherein the conductive layer is electrically connected with the connection terminal of the integrated circuit in the opening of the flexible substrate.
26. A method for manufacturing a semiconductor device according to claim 24 , wherein the conductive layer is electrically connected with the connection terminal of the integrated circuit in the opening of the flexible substrate.
27. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer comprising a silane coupling agent over a first substrate;
forming a colored layer over the peeling layer;
forming an insulating layer covering the colored layer;
forming a conductive layer over the insulating layer;
forming an orientation film over the conductive layer;
peeling the colored layer, the insulating layer, the conductive layer and the orientation film from the first substrate;
attaching a second substrate to the colored layer, the insulating layer and the conductive layer;
forming a sealant over the second substrate;
coating a region surrounded by the sealant with a liquid crystal material; and
attaching the second substrate and an active matrix substrate with the sealant.
28. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer in which oxygen and silicon are combined and an inactive group is combined with the silicon over a first substrate;
forming a colored layer over the peeling layer;
forming an insulating layer covering the colored layer;
forming a conductive layer over the insulating layer;
forming an orientation film over the conductive layer;
peeling the colored layer, the insulating layer, the conductive layer and the orientation film from the first substrate at a portion including the peeling layer or at a boundary between the peeling layer and the colored layer;
attaching a second substrate to the colored layer, the insulating layer and the conductive layer;
forming a sealant over the second substrate;
coating a region surrounded by the sealant with a liquid crystal material; and
attaching the second substrate and an active matrix substrate with the sealant.
29. A method for manufacturing a semiconductor device according to claim 27 , further comprising:
attaching an adhesive to the orientation film after forming the orientation film.
30. A method for manufacturing a semiconductor device according to claim 28 , further comprising:
attaching an adhesive to the orientation film after forming the orientation film.
31. A method for manufacturing a semiconductor device according to claim 28 , further comprising:
removing a remaining peeling layer after peeling the colored layer, the insulating layer, the conductive layer and the orientation film.
32. A method for manufacturing a semiconductor device according to claim 27 , wherein the conductive layer is an opposite electrode.
33. A method for manufacturing a semiconductor device according to claim 28 , wherein the conductive layer is an opposite electrode.
34. A method for manufacturing a semiconductor device according to claim 27 , wherein the peeling layer is formed by coating with the silane coupling agent.
35. A method for manufacturing a semiconductor device according to claim 27 , wherein the first substrate is a substrate selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a metal substrate and a silicon wafer.
36. A method for manufacturing a semiconductor device according to claim 28 , wherein the first substrate is a substrate selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a metal substrate and a silicon wafer.
37. A method for manufacturing a semiconductor device according to claim 27 , wherein the second substrate is a flexible substrate.
38. A method for manufacturing a semiconductor device according to claim 28 , wherein the second substrate is a flexible substrate.