Process for selective area deposition of inorganic materials
An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
1. An atomic-layer-deposition process for forming a patterned thin film comprising:
(a) providing a substrate;
(b) applying a composition comprising a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or a polymer, which polymer may be optionally crosslinked;
(c) patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material;
(d) depositing an inorganic thin film on the substrate, comprising simultaneously directing a series of gas flows along substantially parallel elongated output channels in a delivery head, wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material to form the inorganic thin film, wherein the first reactive gaseous material is a volatile organo-metallic precursor compound;
wherein the process is carried out substantially at or above atmospheric pressure while the temperature of the substrate during deposition is under 300° C.,
wherein the inorganic thin film is substantially deposited only in the selected areas of the substrate effectively not having the deposition inhibitor material,
wherein one or more of the first and second gaseous materials and the inert purge gas, when simultaneously supplied to and exhausted from the substrate surface, create a gas fluid bearing that maintains a substantially uniform distance between the output face of the delivery hand and the substrate surface during thin-film material deposition, and
wherein depositing the thin inorganic film is carried out with relative motion between the substrate and the delivery head.
2. The process of claim 1 wherein the inorganic thin film is a metal or comprises a metal-containing compound.
3. The process of claim 2 wherein the metal-containing compound comprises a Group V or Group VI anion.
4. The process of claim 2 wherein the metal-containing compound is an oxide, nitride, sulfide, or phosphide.
5. The process of claim 2 wherein the metal-containing compound contains zinc, aluminum, titanium, hafnium, zirconium, or indium.
6. The process of claim 2 wherein the metal is copper, tungsten, aluminum, nickel, ruthenium, or rhodium.
7. The process of claim 1 wherein the deposition inhibitor material is a compound or polymer that, after being applied to the substrate surface, is subsequently crosslinked.
8. The process of claim 1 wherein the deposition inhibitor material is a compound or polymer that forms a self-assembled monolayer on the substrate.
9. The process of claim 1 wherein the deposition inhibitor material is selected from the group consisting of poly(perfluoroalkyl methacrylate); poly(methyl methacrylate); poly(cyclohexyl methacrylate); poly(benzyl methacrylate); poly(iso-butylene); poly(9,9-dioctylfluorenyl-2,7-diyl); polystyrene; poly(vinyl alcohol); poly(hexafluorobutyl methacrylate), and copolymers thereof, wherein each said alkyl has one to six carbon atoms.
10. The process of claim 1 wherein the deposition inhibitor material has an inhibition power of at least 50 Å.
11. The process of claim 1 wherein the process of applying and patterning the deposition inhibitor material comprises depositing a uniform layer of deposition inhibitor material and subsequently patterning the layer.
12. The process of claim 11 wherein the layer is uniformly deposited and subsequently patterned by photolithography.
13. The process of claim 1 wherein the processes of applying and patterning the deposition inhibitor material comprises pattern-wise depositing the deposition inhibitor material.
14. The process of claim 13 wherein the pattern-wise deposition is by inkjet printing, gravure, flexography, donor transfer, micro-contact printing, or offset lithography.
15. The process of claim 1 wherein the series of gas flows are provided by the delivery head comprising, facing the substrate in plan view, a series of substantially parallel elongated output openings in an output face of the delivery head, the output face positioned over the substrate in close proximity thereto, the output face of the delivery head spaced within 1 mm of the substrate surface.
16. The process of claim 15 wherein there are elongated exhaust channels between elongated output openings for the first reactive gaseous material and the second reactive gaseous material.
17. The process of claim 1 wherein a given area of the substrate is exposed to a gas flow in an elongated output opening for less than 100 milliseconds.
18. The process of claim 1 wherein relative motion of the substrate to the delivery head is at a speed at least 0.1 cm/sec.
19. The process of claim 1 wherein the series of gas flows is at a speed of at least 1 cm/sec.
20. The process of claim 1 wherein the temperature of the substrate during deposition is under 200° C.
21. The process of claim 1 wherein the second reactive gaseous material is a non-metallic compound.
22. The process of claim 1 wherein the process is used to make an inorganic thin film semiconductor in a thin film transistor wherein the inorganic thin film semiconductor comprises a zinc-oxide-based material, the process comprising forming on the substrate, at a substrate temperature of 250° C. or less, at least one layer comprising a zinc-oxide based material, wherein the zinc-oxide material is a reaction product of at least two reactive gases, the first reactive gas comprising an organo-zinc precursor compound and the second reactive gas comprising a reactive oxygen-containing gaseous material.
23. The process of claim 1 wherein the substrate or a support for the substrate comprises a moving web, wherein the support for the substrate maintains a surface of the substrate at a separation distance of within 0.3 mm of an output face of a deposition device.
24. The process of claim 1 for manufacturing an n-type zinc-oxide-based thin film semiconductor.