Method of manufacturing semiconductor device with improved design freedom of external terminal
A semiconductor method comprises a method for making a device comprising: a base; a semiconductor chip provided on the base which includes a first main surface 20 a on which a plurality of electrode pads is provided, a surface protecting film provided on the first main surface, a second main surface which opposes the first main surface, and a plurality of side surfaces between the surface of the surface protecting film and the second main surface; an insulating extension portion formed so as to surround the side surfaces of the semiconductor chip; a plurality of wiring patterns electrically connected to the electrode pads, respectively and extended from the electrode pads to the surface of the extension portion; a sealing portion formed on the wiring patterns such that a part of each of the wiring patterns is exposed; and a plurality of external terminals provided on the wiring patterns in a region including the upper side of the extension portion.
1. A manufacturing method for a semiconductor device comprising:
(a) setting a plurality of semiconductor chip disposal regions, each for one of a plurality of semiconductor chips to be disposed thereon, at a predetermined pitch on a base, each of the plurality of semiconductor chips having a first main surface with a plurality of electrode pads provided thereon, a surface protecting film formed on the first main surface and exposing the electrode pads, a second main surface opposite to the first main surface, and a plurality of side surfaces between a surface of the surface protecting film and the second main surface;
(b) forming an extension portion from an insulating material such that a plurality of concave portions are formed on the base, each of the concave portions being defined by inside walls, with a bottom surface portion of each concave portion defined by a lowermost portion of the inside walls matching a profile of the second main surface of one of the plurality of semiconductor chips, the inside walls being gradually thinner towards a center of the concave portion;
(c) providing the plurality of semiconductor chips each in a corresponding one of the plurality of concave portions, the second main surface thereof facing the bottom surface of the corresponding one concave portion, and the side surfaces thereof being in contact with the lowermost portion of the inside walls of the corresponding one concave portion;
(d) forming wiring patterns extending from the electrode pads to a region including an upper side of the extension portion;
(e) forming a plurality of external terminals over the wiring patterns in the region including the upper side of the extension portion; and
(f) severing the plurality of semiconductor chips to form individual semiconductor devices each having one of the plurality of semiconductor chips.
2. A manufacturing method for a semiconductor device comprising:
(a) setting a plurality of semiconductor chip disposal regions, each for one of a plurality of semiconductor chips to be disposed thereon, at a predetermined pitch on a base, each of the plurality of semiconductor chips having a first main surface with a plurality of electrode pads provided thereon, a surface protecting film formed on the first main surface and exposing the electrode pads, a second main surface opposite to the first main surface, and a plurality of side surfaces between a surface of the surface protecting film and the second main surface;
(b) forming an extension portion from an insulating material such that a plurality of concave portions are formed on the base, each of the concave portions being defined by inside walls, with a bottom surface portion of each concave portion defined by a lowermost portion of the inside walls matching a profile of the second main surface of one of the plurality of semiconductor chips, the inside walls being gradually thinner towards a center of the concave portion;
(c) providing the plurality of semiconductor chips each in a corresponding one of the plurality of concave portions, the second main surface thereof facing the bottom surface of the corresponding one concave portion, and the side surfaces thereof being in contact with the lowermost portion of the inside walls of the corresponding one concave portion;
(d) forming wiring patterns extending from the electrode pads to a region including an upper side of the extension portion;
(e) forming a plurality of electrode posts on each of a part of the wiring patterns on the extension portion;
(f) forming a sealing portion on the wiring patterns and the electrode posts such that a top surface of the electrode posts is exposed;
(g) forming external terminals on the top surface of the exposed electrode posts; and
(h) severing the plurality of semiconductor chips to form individual semiconductor devices each having one of the plurality of semiconductor chips.
3. A manufacturing method for a semiconductor device comprising:
(a) setting a plurality of semiconductor chip disposal regions, each for one of a plurality of semiconductor chips to be disposed thereon, at a predetermined pitch on a base, each of the plurality of semiconductor chips having a first main surface with a plurality of electrode pads provided thereon, a surface protecting film formed on the first main surface and exposing the electrode pads, a second main surface opposite to the first main surface, and a plurality of side surfaces between a surface of the surface protecting film and the second main surface;
(b) providing an insulating material such that a plurality of concave portions are provided on the base, each of the concave portions being defined by inside walls, with a bottom surface portion of each concave portion defined by a lowermost portion of the inside walls matching a profile of the second main surface of one of the plurality of semiconductor chips, the inside walls being gradually thinner towards a center of the concave portion;
(c) providing the plurality of semiconductor chips each in a corresponding one of the plurality of concave portions, the second main surface thereof facing the bottom surface of the corresponding one concave portion, and the side surfaces thereof being in contact with the lowermost portion of the inside walls of the corresponding one concave portion;
(d) forming an extension portion by curing the insulating material;
(e) forming an insulating film on the surface of the extension portion and the surface protecting film such that the electrode pads are exposed;
(f) forming wiring patterns extending from the electrode pads to a region including an upper side of the extension portion;
(g) forming a sealing portion on the insulating film on which the wiring patterns are formed such that a part of each of the wiring patterns positioned on the extension portion is exposed;
(h) forming a plurality of external terminals over the wiring patterns in the region including the upper side of the extension portion and connecting the external terminals to the wiring patterns; and
(i) severing the plurality of semiconductor chips to form individual semiconductor devices each having one of the plurality of semiconductor chips.
4. A manufacturing method for a semiconductor device comprising:
(a) setting a plurality of semiconductor chip disposal regions, each for one of a plurality of semiconductor chips to be disposed thereon, at a predetermined pitch on a base, each of the plurality of semiconductor chips having a first main surface with a plurality of electrode pads provided thereon, a surface protecting film formed on the first main surface and exposing the electrode pads, a second main surface opposite to the first main surface, and a plurality of side surfaces between a surface of the surface protecting film and the second main surface;
(b) providing an insulating material such that a plurality of concave portions are provided on the base, each of the concave portions being defined by inside walls, with a bottom surface portion of each concave portion defined by a lowermost portion of the inside walls matching a profile of the second main surface of one of the plurality of semiconductor chips, the inside walls being gradually thinner towards a center of the concave portion;
(c) providing the plurality of semiconductor chips each in a corresponding one of the plurality of concave portions, the second main surface thereof facing the bottom surface of the corresponding one concave portion, and the side surfaces thereof being in contact with the lowermost portion of the inside walls of the corresponding one concave portion;
(d) forming an extension portion by curing the insulating material;
(e) forming an insulating film on the surface of the extension portion and the surface protecting film such that the electrode pads are exposed;
(f) forming wiring patterns extending from the electrode pads to a region including an upper side of the extension portion;
(g) forming a plurality of electrode posts on each of the part of the wiring patterns on the extension portion;
(h) forming a sealing portion on the wiring patterns and the electrode posts such that a top surface of the electrode posts is exposed;
(i) forming external terminals on the top surface of the exposed electrode posts; and
(j) severing the plurality of semiconductor chips to form individual semiconductor devices each having one of the plurality of semiconductor chips.