Semiconductor device

1. A semiconductor device, comprising:

a first semiconductor chip;

a second semiconductor chip, provided on one side of said first semiconductor chip, spaced apart from said first semiconductor chip with a predetermined distance;

a seal ring provided between said first and said second semiconductor chips, wherein an internal region, which is an inner region of said seal ring, and an external region, which is an outer region of said seal ring, are provided between said first and said second semiconductor chips;

a first conductive member, provided in said internal region, wherein one end of said first conductive member connects to said first semiconductor chip and an other end of said first conductive member connects to said second semiconductor chip;

an interconnect abutting a top surface of said first semiconductor chip; and

a second conductive member, provided in said external region, wherein one end of said second conductive member abuts said interconnect and an other end of said second conductive member connects to said second semiconductor chip.

2. The semiconductor device according to claim 1 , wherein a portion of said interconnect is provided on said one side of said first semiconductor chip through an insulating film.

3. The semiconductor device according to claim 2 , wherein said insulating film comprises an organic insulating film.

4. The semiconductor device according to claim 1 , further comprising:

an insulating layer, provided on said one side of said first semiconductor chip, and covering said second semiconductor chip; and

an external electrode terminal, provided on said insulating layer, and electrically connected to said second conductive member,

wherein said first semiconductor chip has a larger area than said second semiconductor chip.

5. The semiconductor device according to claim 1 , further comprising:

an insulating layer, provided on said one side of said first semiconductor chip, and covering said second semiconductor chip;

a conductor plug, provided in said insulating layer, and electrically connected to said interconnect; and

an external electrode terminal, provided on said insulating layer, and electrically connected to said conductor plug,

wherein said first semiconductor chip has a larger area than said second semiconductor chip.

6. The semiconductor device according to claim 1 ,

wherein said internal region is in a condition of being filled with an inert gas or in a vacuum condition.

7. The semiconductor device according to claim 1 ,

wherein said external region is filled with an insulating resin.

8. A semiconductor device, comprising:

a first semiconductor chip;

a second semiconductor chip, provided on one side of said first semiconductor chip, spaced apart from said first semiconductor chip by a predetermined distance;

a seal ring comprising a multilayer film structure provided between said first and said second semiconductor chips;

wherein an internal region, which is an inner region of said seal ring, and an external region, which is an outer region of said seal ring, are provided between said first and said second semiconductor chips;

an interconnect abutting a top surface of said first semiconductor chip; and

a conductive member, one end of said conductive member abutting said interconnect in said external region and an other end of said conductive member abutting said second semiconductor chip in said external region.

9. The semiconductor device according to claim 1 , wherein said first conductive member and said second conductive member comprise a same material as said seal ring.

10. The semiconductor device according to claim 8 , wherein said multilayer structure comprises a copper (Cu) film and a tin (Sn) film.

11. The semiconductor device according to claim 10 , wherein

said copper film is formed on said first semiconductor chip, and

said tin film is formed on said copper film.

12. The semiconductor device according to claim 5 , wherein said interconnect comprises a larger width and thickness and a lower electrical resistance than interconnects formed in said first semiconductor chip.

13. The semiconductor device according to claim 4 , wherein an area where said external electrode is formed is substantially equivalent to an area of said first semiconductor chip.

14. The semiconductor device according to claim 7 , wherein said insulating resin covers side surfaces of said second semiconductor chip, and a top surface of said second semiconductor chip remains exposed.

15. The semiconductor device according to claim 1 , wherein an array pitch of said first conductive member is smaller than an array pitch of said second conductive member.

16. The semiconductor device according to claim 15 , wherein

said array pitch of said first conductive member is 1 μm, and

said array pitch of said second conductive member is 10 μm.

17. The semiconductor device according to claim 1 , wherein, in a plan view, an area of said first conductive member is smaller than an area of said second conductive member.

18. The semiconductor device according to claim 8 , wherein

said first semiconductor chip comprises a memory chip, and

said second semiconductor chip comprises a logic LSI chip.

19. The semiconductor device according to claim 1 , wherein said first conductive member and said second conductive member have a same height as each other.

20. The semiconductor device according to claim 1 , wherein said one end of said second conductive member abuts said interconnect in said external region, and said other end of said second conductive member abuts said second semiconductor chip in said external region.