Manufacturing method of semiconductor device
View Patent ↗A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer, a tensile stress of the light absorption layer is made lower than that before irradiation with the laser beam.
1. A manufacturing method of a semiconductor device, comprising the steps of:
forming a light absorption layer of conductive material or semiconductor material;
selectively irradiating at least one region of the light absorption layer with a laser beam to thereby removing the irradiated region of the light absorption layer; and
adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer to reduce a tensile stress of the light absorption layer.
2. The manufacturing method of a semiconductor device according to claim 1 , further comprising the steps of:
forming a first material layer before forming the light absorption layer; and
selectively etching the first material layer using a remaining part of the light absorption layer as a mask.
3. The manufacturing method of a semiconductor device according to claim 2 , wherein the first material layer is formed using a conductive material or a semiconductor material.
4. The manufacturing method of a semiconductor device according to claim 1 , wherein the light absorption layer is formed so as to have tensile stress.
5. The manufacturing method of a semiconductor device according to claim 1 , wherein a tensile stress of the light absorption layer is made lower than that before the irradiating step by adding the impurity element or the inert element.
6. The manufacturing method of a semiconductor device according to claim 1 , wherein phosphorus (P) or arsenic (As), which is an impurity element imparting n-type conductivity, is added as the impurity element imparting one conductivity type.
7. The manufacturing method of a semiconductor device according to claim 1 , wherein boron (B), aluminum (Al), or gallium (Ga), which is an impurity element imparting p-type conductivity, is added as the impurity element imparting one conductivity type.
8. The manufacturing method of a semiconductor device according to claim 1 , wherein nitrogen (N), helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe) is added as the inert element.
9. The manufacturing method of a semiconductor device according to claim 1 , wherein the light absorption layer is to be used as a conductive layer or a semiconductor layer.
10. A manufacturing method of a semiconductor device, comprising the steps of:
sequentially forming a light absorption layer and a light-transmitting layer;
selectively irradiating at least one region of the light absorption layer with a laser beam to remove at least a region of the light-transmitting layer adjacent to the irradiated region of the light absorption layer; and
adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light-transmitting layer to reduce a tensile stress of the light-transmitting layer.
11. The manufacturing method of a semiconductor device according to claim 10 ,
wherein the irradiated region of the light absorption layer is also removed by the irradiating step, and
wherein the method further comprises the steps of:
forming a first material layer before forming the light absorption layer; and
selectively etching the first material layer using a remaining part of the light-transmitting layer and the light absorption layer as a mask.
12. The manufacturing method of a semiconductor device according to claim 11 , wherein the first material layer is formed using a conductive material or a semiconductor material.
13. The manufacturing method of a semiconductor device according to claim 10 , further comprising the step of:
forming a conductive layer over the light-transmitting layer so that the conductive layer is electrically connected to the light absorption layer through the removed region of the light-transmitting layer.
14. The manufacturing method of a semiconductor device according to claim 10 ,
wherein the irradiated region of the light absorption layer is also removed by the irradiating step, and
wherein the method further comprises the steps of:
forming a first material layer before forming the light absorption layer; and
forming a conductive layer over the light-transmitting layer so that the conductive layer is electrically connected to the first material layer through the removed region of the light-transmitting layer and the light absorption layer.
15. The manufacturing method of a semiconductor device according to claim 14 , wherein the first material layer is formed using a conductive material or a semiconductor material.
16. The manufacturing method of a semiconductor device according to claim 10 , wherein the light absorption layer is formed using a conductive material or a semiconductor material.
17. The manufacturing method of a semiconductor device according to claim 10 , wherein a tensile stress of the light-transmitting layer is made lower than that before the irradiating step by adding the impurity element or the inert element.
18. The manufacturing method of a semiconductor device according to claim 10 , wherein phosphorus (P) or arsenic (As), which is an impurity element imparting n-type conductivity, is added as the impurity element imparting one conductivity type.
19. The manufacturing method of a semiconductor device according to claim 10 , wherein boron (B), aluminum (Al), or gallium (Ga), which is an impurity element imparting p-type conductivity, is added as the impurity element imparting one conductivity type.
20. The manufacturing method of a semiconductor device according to claim 10 , wherein nitrogen (N), helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe) is added as the inert element.
21. A manufacturing method of a semiconductor device, comprising the steps of:
sequentially forming a first material layer and a separation layer;
selectively irradiating at least one region of the separation layer with a laser beam to decrease adhesiveness of the irradiated region of the separation layer;
removing, after the step of selective irradiation, the irradiated region of the separation layer;
selectively etching the first material layer using a remaining part of the separation layer as a mask; and
adding an impurity element imparting one conductivity type or an inert element to the remaining part of the separation layer to reduce a tensile stress of the separation layer.
22. The manufacturing method of a semiconductor device according to claim 21 , wherein a tensile stress of the separation layer is made lower than that before the irradiating step by adding the impurity element or the inert element.
23. The manufacturing method of a semiconductor device according to claim 21 , wherein a layer that absorbs the laser beam is formed as the separation layer.
24. The manufacturing method of a semiconductor device according to claim 21 , wherein a metal oxide layer is formed as the separation layer.
25. The manufacturing method of a semiconductor device according to claim 21 , wherein the first material layer is formed using a conductive material or a semiconductor material.
26. The manufacturing method of a semiconductor device according to claim 21 , wherein phosphorus (P) or arsenic (As), which is an impurity element imparting n-type conductivity, is added as the impurity element imparting one conductivity type.
27. The manufacturing method of a semiconductor device according to claim 21 , wherein boron (B), aluminum (Al), or gallium (Ga), which is an impurity element imparting p-type conductivity, is added as the impurity element imparting one conductivity type.
28. The manufacturing method of a semiconductor device according to claim 21 , wherein nitrogen (N), helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe) is added as the inert element.
29. A manufacturing method of a semiconductor device, comprising the steps of:
sequentially forming a first material layer, a separation layer, and a light-transmitting layer;
selectively irradiating at least one region of the separation layer with a laser beam to decrease adhesiveness of the irradiated region of the separation layer
removing the irradiated region of the separation layer and a region of the light-transmitting layer adjacent to the irradiated region of the separation layer;
selectively etching the first material layer using a remaining part of the light-transmitting layer and the separation layer as a mask; and
adding an impurity element imparting one conductivity type or an inert element to the remaining part of the light-transmitting layer and the separation layer to reduce a tensile stress of the separation layer.
30. The manufacturing method of a semiconductor device according to claim 29 , wherein a tensile stress of the separation layer is made lower than that before the irradiating step by adding the impurity element or the inert element.
31. The manufacturing method of a semiconductor device according to claim 29 , wherein a layer that absorbs the laser beam is formed as the separation layer.
32. The manufacturing method of a semiconductor device according to claim 29 , wherein a metal oxide layer is formed as the separation layer.
33. The manufacturing method of a semiconductor device according to claim 29 , wherein the first material layer is formed using a conductive material or a semiconductor material.
34. The manufacturing method of a semiconductor device according to claim 29 , wherein phosphorus (P) or arsenic (As), which is an impurity element imparting n-type conductivity, is added as the impurity element imparting one conductivity type.
35. The manufacturing method of a semiconductor device according to claim 29 , wherein boron (B), aluminum (Al), or gallium (Ga), which is an impurity element imparting p-type conductivity, is added as the impurity element imparting one conductivity type.
36. The manufacturing method of a semiconductor device according to claim 29 , wherein nitrogen (N), helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe) is added as the inert element.