Mixture for doping semiconductors
A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.
1. Doping mixture for a semiconductor dopant, comprising at least one n-dopant for doping of a semiconductor surface, wherein the dopant contains a water-soluble phosphorus source, water and a mixture of two or more surfactants, at least one of the surfactants being a nonionic, non-fluorinated surfactant and at least another of the surfactants being a fluorinated surfactant, wherein the mixture contains non-ionic, non-fluorinated surfactant in an amount from of 0.01 to 8 wt. % and fluorinated surfactant in an amount of 0.01 to 1 wt. %.
2. Doping mixture according to claim 1 , wherein said doping mixture further comprises an arsenic source or an antimony source.
3. Doping mixture according to claim 1 , containing as dopant phosphoric acid or a phosphoric acid derivative.
4. Doping mixture according to claim 1 , containing a nonionic, fluorinated surfactant.
5. Doping mixture according to claim 1 , containing the dopant in an amount from 0.01 to 80 wt. %, referred to the doping mixture.
6. Doping mixture according to claim 1 , containing a fluorinated, nonionic surfactant in an amount from 0.05 to 0.8 wt. %.
7. Doping mixture according to claim 1 , containing a non-fluorinated, nonionic surfactant in an amount from 0.05 to 6 wt. %.
8. Doping mixture according to claim 1 , containing nonionic, fluorinated surfactants and nonionic, non-fluorinated surfactants in a weight ratio of 50:1 to 1:500.
9. Doping mixture according to claim 1 , containing water in an amount of at least 10 wt. %.
10. Doping mixture according to claim 1 , containing one or more additives.