Manufacturing equipment for polysilicon ingot
View Patent ↗Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.
1. An apparatus for producing a polycrystalline silicon ingot comprising:
a crucible for melting silicon;
first conveying shafts disposed at edges of a pedestal mounted below the crucible for adjusting the height of the crucible;
a plurality of first and second heaters that surround the crucible for heating the crucible, the second heaters being located beneath the crucible and being horizontally moveable to create an opening that exposes the crucible;
a plurality of first and second insulating boards that surround the heaters, the second insulating boards being located beneath the second heaters and being horizontally moveable together with the second heaters located beneath the crucible;
a conveying jig connected to and horizontally moving the second heaters and the second insulating boards; and
a cooling plate located below the second insulating boards for cooling the crucible.
2. The apparatus for producing a polycrystalline silicon ingot according to claim 1 , further comprising a third insulating board disposed beneath the apparatus for producing the polycrystalline silicon ingot.
3. The apparatus for producing a polycrystalline silicon ingot according to claim 2 , further comprising second conveying shafts disposed at edges of the third insulating board for adjusting the height of the third insulating board.
4. The apparatus for producing a polycrystalline silicon ingot according to claim 2 , wherein the cooling plate has fluid refrigerant flowing therein.
5. The apparatus for producing a polycrystalline silicon ingot according to claim 2 , wherein the ingot producing apparatus is provided inside a chamber, which can create a vacuum.
6. The apparatus for producing a polycrystalline silicon ingot according to claim 5 , wherein the chamber has a tube formed inside the wall surface thereof for allowing cooling water to flow therein.
7. The apparatus for producing a polycrystalline silicon ingot according to claim 1 , wherein the cooling plate has fluid refrigerant flowing therein.
8. The apparatus for producing a polycrystalline silicon ingot according to claim 1 , wherein the ingot producing apparatus is provided inside a chamber, which can create a vacuum.
9. The apparatus for producing a polycrystalline silicon ingot according to claim 8 , wherein the chamber has a tube formed inside the wall surface thereof for allowing cooling water to flow therein.