IP Library Granted Patent US 8,057,775
Granted Patent B2
US 8,057,775 · App. 12/148,927 · Granted Nov 15, 2011

Polycrystalline diamond materials, methods of fabricating same, and applications using same

Assignee: US Synthetic Corporation
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Quick Facts
Patent No.
US 8,057,775
App. No.
12/148,927
Granted
Nov 15, 2011
Kind
B2
Abstract

Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter θ that is less than about 1.0, where θ = x 6 · σ , x is the average particle size of the diamond particle size distribution, and σ is the standard deviation of the diamond particle size distribution. In an embodiment, the diamond particle size distribution can be generally modeled by the following equation: C ⁢ ⁢ P ⁢ ⁢ F ⁢ ⁢ T 100 = D n - D S n D L n - D S n , wherein CPFT is the cumulative percent finer than, D is diamond grain size, D L is the largest-sized diamond grain, D S is the smallest-sized diamond grain, and n is a distribution modulus.

Claims (55)

1. A method, comprising:

subjecting a mixture, in the presence of a catalyst material, to heat and pressure sufficient to form a polycrystalline diamond material, the mixture comprising a plurality of diamond particles exhibiting a substantially unimodal diamond particle size distribution characterized, at least in part, by a parameter θ that is about 0.3 to about 0.7;

wherein

θ

=

x

6

·

σ

;

x is the average particle size of the substantially unimodal diamond particle size distribution;

σ is the standard deviation of the substantially unimodal diamond particle size distribution;

wherein x is about 10 μm to about 20 μm.

2. The method of claim 1 , further comprising selecting the parameter θ to be about 0.5 to about 0.7.

3. The method of claim 1 , further comprising selecting the parameter θ to be about 0.3 to about 0.4.

4. The method of claim 1 , further comprising selecting the average particle size of the mixture to be about 12 μm to about 15 μm and the standard deviation of the mixture to be about 6 μm to about 8.5 μm.

5. The method of claim 1 , further comprising selecting the standard deviation of the mixture to be about 4 μm to about 10 μm.

6. The method of claim 1 wherein the diamond particle size distribution can be generally modeled by the following equation:

C

P

F

T

100

=

D

n

-

D

S

n

D

L

n

-

D

S

n

;

where CPFT is the cumulative percent finer than;

D is diamond particle size;

D L is the largest-sized diamond particle;

D S is the smallest-sized diamond particle; and

n is the distribution modulus.

7. The method of claim 1 wherein subjecting a mixture, in the presence of a catalyst material, to heat and pressure sufficient to form a polycrystalline diamond material comprises infiltrating the mixture with the catalyst.

8. The method of claim 1 wherein the polycrystalline diamond material comprises a plurality of bonded diamond grains defining interstitial regions that exhibit an average lateral dimension of about 10 angstroms to about 1 μm.

9. The method of claim 1 wherein the polycrystalline diamond material is at least about as thermally stable as a partially leached polycrystalline diamond material having a leach depth of about 60 μm to about 70 μm and a different diamond grain size distribution.

10. The method of claim 1 wherein subjecting a mixture, in the presence of a catalyst material, to heat and pressure sufficient to form a polycrystalline diamond material comprises:

exposing the mixture to at least about 40 kilobar; and

heating the mixture to at least about 1000° Celsius.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
SECURITY AGREEMENT Recorded May 9, 2018
From: APERGY (DELAWARE) FORMATION, INC.; APERGY BMCS ACQUISITION CORP.; APERGY ENERGY AUTOMATION, LLC; HARBISON-FISCHER, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 046117/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 22, 2008
From: VAIL, MICHAEL A.; BERTAGNOLLI, KENNETH E.; WIGGINS, JASON; QIAN, JIANG; MIESS, DAVID P.
To: US SYNTHETIC CORPORATION
Reel/Frame 020891/0932 →
Continuity (1)
Related Publication 20090260895A1 · Oct 22, 2009