Interposer and method for manufacturing interposer

1. An interposer comprising:

an inorganic insulating layer;

a first wiring formed in or on a surface of the inorganic insulating layer;

an organic insulating layer formed over the inorganic insulating layer and on the first wiring;

a second wiring formed on the organic insulating layer; and

a conductor portion connecting the first wiring and the second wiring, wherein the second wiring is thicker in thickness than the first wiring, and wherein the second wiring is longer in wiring length than the first wiring.

2. An interposer as set forth in claim 1 , wherein the second wiring is thicker in thickness than the first wiring.

3. An interposer as set forth in claim 1 , wherein a ratio of the thickness of the second wiring to the thickness of the first wiring is greater than 1 and no greater than 15.

4. An interposer as set forth in claim 1 , wherein a ratio of a height of the conductor portion to the thickness of the first wiring is no greater than 5.

5. An interposer as set forth in claim 1 , wherein the second wiring is longer in wiring length than the first wiring.

6. An interposer as set forth in claim 1 , wherein the second wiring is larger in sectional area than the first wiring.

7. An interposer as set forth in claim 1 , wherein the second wiring is lower in wiring resistance per unit length than the first wiring.

8. An interposer as set forth in claim 1 , wherein the first wiring is smaller in L/S than the second wiring.

9. An interposer as set forth in claim 1 , further comprising a protective film formed on the surface of the organic insulating layer.

10. An interposer as set forth in claim 1 , further comprising an inorganic thin film formed between the inorganic insulating layer and the organic insulating layer.

11. An interposer as set forth in claim 1 , further comprising a support substrate wherein the inorganic insulating layer is formed on the support substrate.

12. An interposer as set forth in claim 11 , wherein the support substrate comprises silicon.

13. An interposer as set forth in claim 1 , wherein the first wiring is formed in the inorganic insulating layer.

14. An interposer as set forth in claim 1 , wherein a surface of the first wiring and the surface of the inorganic insulating layer are substantially on a same plane.

15. An interposer as set forth in claim 1 , further comprising a plurality of pads formed on a surface of the organic insulating layer and a stiffener having openings or recessed portions for exposing the pads, wherein the pads are configured to load a semiconductor element.

16. A method of manufacturing an interposer comprising:

forming an inorganic insulating layer over a support substrate;

forming a first wiring in or on a surface of the inorganic insulating layer;

forming an organic insulating layer over the inorganic insulating layer and the first wiring;

forming a second wiring on the organic insulating layer; and forming a conductor portion connecting the second wiring and the first wiring, wherein the second wiring is thicker in thickness than the first wiring, and wherein the second wiring is longer in wiring length than the first wiring.

17. A method of manufacturing an interposer as set forth in claim 16 , wherein the forming of the first wiring comprises forming the first wiring by a damascene method.

18. A method of manufacturing an interposer as set forth in claim 16 , wherein the forming of the second wiring comprises forming the second wiring by a semi-additive method.

19. A method of manufacturing an interposer as set forth in claim 16 , further comprising removing the support substrate.

20. A method of manufacturing an interposer as set forth in claim 16 , wherein the forming of the second wiring and the forming of the conductor portion are performed in one process.