Branched nanoscale wires
The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or “branches” can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles. In another embodiment, nanoparticles are deposited onto a nanoscale wire by etching the nanoscale wire to produce an H-terminated surface, then exposing the surface to a solution comprising a metal ion, which can be reduced by the surface to form nanoparticles. Segments or branches can then be grown from the deposited nanoparticles to form the branched nanoscale wire.
1. An article, comprising:
a branched nanoscale wire comprising a vertex comprising at least a first segment having a first composition; a second segment having a second composition different from the first composition; and a third segment,
wherein the vertex defines a T junction of the first, second, and third segments.
2. The article of claim 1 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group IV semiconductor.
3. The article of claim 1 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group III-V semiconductor.
4. The article of claim 1 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group II-VI semiconductor.
5. The article of claim 1 , wherein the first segment comprises a semiconductor.
6. The article of claim 5 , wherein the second segment comprises a semiconductor different from the semiconductor of the first segment.
7. The article of claim 5 , wherein the second segment comprises a metal.
8. The article of claim 7 , wherein the second segment comprises gold.
9. An article, comprising:
a branched nanoscale wire comprising a vertex comprising at least a first segment having a first composition, a second segment having a second composition different from the first composition, and a third segment,
wherein the first, second, and third segments co-intersect at the vertex, and wherein the first segment and the third segment are substantially co-linear.
10. The article of claim 9 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group IV semiconductor.
11. The article of claim 9 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group III-V semiconductor.
12. The article of claim 9 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group II-VI semiconductor.
13. The article of claim 9 , wherein the first segment comprises a semiconductor.
14. The article of claim 13 , wherein the second segment comprises a semiconductor different from the semiconductor of the first segment.
15. An article, comprising:
a nanoscale wire backbone comprising a plurality of vertexes, each vertex defined by the co-intersection of three or more segments, wherein at least one vertex comprises a first segment having a first composition and a second segment having a second composition different from the first composition.
16. The article of claim 15 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group IV semiconductor.
17. The article of claim 15 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group III-V semiconductor.
18. The article of claim 15 , wherein the first segment comprises a Group IV semiconductor, and the second segment comprises a Group II-VI semiconductor.
19. The article of claim 15 , wherein the first segment comprises a semiconductor.
20. The article of claim 19 , wherein the second segment comprises a semiconductor different from the semiconductor of the first segment.