IP Library Granted Patent US 8,062,425
Granted Patent B2
US 8,062,425 · App. 11/452,196 · Granted Nov 22, 2011

Vapor deposition system and vapor deposition method

Assignee: Canon Kabushiki Kaisha
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Quick Facts
Patent No.
US 8,062,425
App. No.
11/452,196
Granted
Nov 22, 2011
Kind
B2
Abstract

There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the vapor deposition material evaporated from the vapor depositing source to flow from the vapor depositing source through a transfer path into a recovery container. The vapor deposition system or the vapor deposition method is capable of reducing an amount of a vapor deposition material consumed without being deposited on an object not to be processed during non-vapor deposition.

Claims (11)

1. A vapor deposition system comprising:

a chamber;

a vapor depositing source;

a recovery container;

a transfer path for connecting the vapor depositing source to the recovery container; and

a flow path switching unit for switching between a first flow path for releasing a vapor deposition material evaporated from the vapor depositing source into the chamber and a second flow path for causing the vapor deposition material evaporated from the vapor depositing source to flow from the vapor depositing source through the transfer path into the recovery container,

wherein the first flow path is conducted to the vapor depositing source by an opening at one end of the first flow path, the opening disposed on an upper portion of the vapor depositing source;

the transfer path is conducted to the vapor depositing source by a vapor deposition material inlet at one end of the transfer path, the vapor deposition material inlet disposed on a side wall of the vapor depositing source;

the flow path switching unit is a cover hinged on and rotated around a shaft and is disposed in the vapor depositing source; and

when the cover covers the vapor deposition material inlet, the transfer path is cut off, whereby the vapor deposition material flows into the first flow path, and when the cover covers the opening, the first flow path is cut off, whereby the vapor deposition material flows into the second flow path through the transfer path.

2. The vapor deposition system according to claim 1 , wherein conductance until releasing of the vapor deposition material evaporated from the vapor depositing source into the chamber and conductance until reception of the vapor deposition material evaporated from the vapor depositing source in the recovery container are equal to each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 14, 2006
From: YOSHIKAWA, TOSHIAKI; FUKUDA, NAOTO
To: CANON KABUSHIKI KAISHA
Reel/Frame 017998/0996 →
Priority Claims (1)
JP 2005-179262 · Jun 20, 2005 · national
Continuity (1)
Related Publication 20060283382A1 · Dec 21, 2006