Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same

1. A microelectronic package comprising:

a substrate;

a silicon patch embedded in the substrate;

a first interconnect structure at a first location of the silicon patch and a second interconnect structure at a second location of the silicon patch; and

an electrically conductive line in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.

2. The microelectronic package of claim 1 wherein:

the substrate contains a well having a buffer material therein; and

the silicon patch is embedded in the well adjacent to the buffer material.

3. The microelectronic package of claim 1 wherein:

at least one of the first and second interconnect structures comprises a copper pillar.

4. The microelectronic package of claim 3 wherein:

the copper pillar comprises an interlocking feature.

5. The microelectronic package of claim 1 wherein:

a width of the electrically conductive line is no greater than approximately 0.2 microns.

6. The microelectronic package of claim 1 further comprising:

a power line in the substrate.

7. The microelectronic package of claim 1 wherein:

the substrate has an effective coefficient of thermal expansion of between approximately 10 ppm/° K and approximately 12 ppm/° K.

8. A microelectronic package comprising:

a substrate;

a first die and a second die over the substrate;

a silicon patch embedded in the substrate;

a first plurality of interconnect structures in the silicon patch underneath the first die and a second plurality of interconnect structures in the silicon patch underneath the second die; and

an electrically conductive line connecting a first one of the first plurality of interconnect structures and a first one of the second plurality of interconnect structures to each other.

9. The microelectronic package of claim 8 wherein:

the substrate contains a well having a buffer material therein; and

the silicon patch is embedded in the well adjacent to the buffer material.

10. The microelectronic package of claim 9 wherein:

a spacing between at least one pair of adjacent interconnect structures in at least one of the first and second pluralities of interconnect structures is no greater than 80 microns.

11. The microelectronic package of claim 9 wherein:

the substrate has an effective coefficient of thermal expansion of between approximately 10 ppm/° K and approximately 12 ppm/° K.

12. The microelectronic package of claim 9 wherein:

each one of the first and second pluralities of interconnect structures comprises a copper pillar.

13. The microelectronic package of claim 12 wherein:

at least one of the copper pillars comprises an interlocking feature.

14. The microelectronic package of claim 12 wherein:

a width of the electrically conductive line is no greater than approximately 0.2 microns.

15. The microelectronic package of claim 14 further comprising:

a power line in the substrate.

16. A method of manufacturing a microelectronic package, the method comprising:

providing a substrate having a silicon patch embedded therein;

forming a first interconnect structure at a first location of the silicon patch and a second interconnect structure at a second location of the silicon patch; and

electrically connecting the first interconnect structure and the second interconnect structure to each other.

17. The method of claim 16 further comprising:

providing a first die over the first location and a second die over the second location;

electrically connecting the first die and the first interconnect structure to each other; and

electrically connecting the second die and the second interconnect structure to each other.

18. The method of claim 17 wherein:

electrically connecting the first die and the first interconnect structure to each other comprises:

providing a first electrically conductive structure at the first die; and

providing a first solder joint between the first electrically conductive structure and the first interconnect structure; and

electrically connecting the second die and the second interconnect structure to each other comprises:

providing a second electrically conductive structure at the second die; and

providing a second solder joint between the second electrically conductive structure and the second interconnect structure.

19. The method of claim 17 wherein:

electrically connecting the first die and the first interconnect structure to each other comprises:

providing a first electrically conductive structure at the first die; and

pressing together the first electrically conductive structure and the first interconnect structure; and

electrically connecting the second die and the second interconnect structure to each other comprises:

providing a second electrically conductive structure at the second die; and

pressing together the second electrically conductive structure and the second interconnect structure.

20. The method of claim 17 wherein:

the first interconnect structure has a first interlocking feature;

the second interconnect structure has a second interlocking feature;

electrically connecting the first die and the first interconnect structure to each other comprises:

providing a first electrically conductive structure at the first die, the first electrically conductive structure having a third interlocking feature; and

interlocking the first interlocking feature and the third interlocking feature; and

electrically connecting the second die and the second interconnect structure to each other comprises:

providing a second electrically conductive structure at the second die, the second electrically conductive structure having a fourth interlocking feature; and

interlocking the second interlocking feature and the fourth interlocking feature.