Method to control uniformity using tri-zone showerhead
Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
1. A method for processing a substrate, comprising:
positioning the substrate on a substrate support disposed in a plasma chamber,
wherein a showerhead having a bottom surface is disposed in the plasma chamber such that the bottom surface is disposed above the substrate support, and
wherein the bottom surface of the showerhead comprises an inner distribution zone having a plurality of holes directed to a central region of the substrate support, a middle distribution zone having a plurality of holes directed to a middle region of the substrate support located radially outwards to the central region, and an edge distribution zone having a plurality of holes directed to a region near an edge of the substrate support, such that each of the distribution zones is isolated from the other distribution zones;
flowing a first processing gas comprising an etching gas through the inner distribution zone towards a top surface of the substrate;
flowing a second processing gas comprising a passivating gas through the edge distribution zone towards an edge region of the substrate; and
striking a plasma of the processing gases in the plasma chamber.
2. The method of claim 1 , further comprising flowing a third processing gas comprising an etching gas through the middle distribution zone towards a middle region of the substrate located radially outwards to the central region to improve edge performance.
3. The method of claim 1 , further comprising:
flowing the first processing gas through the inner distribution zone at a first flow rate towards a central region of the substrate; and
flowing the first processing gas through the middle distribution zone at a second flow rate towards a middle region radially outwards the central region of the substrate.
4. The method of claim 3 , wherein flowing the first processing gas further comprises adjusting a ratio of the first flow rate and second flow rate to improve process uniformity across the surface of the substrate.
5. The method of claim 4 , further comprising adjusting a flow rate of the second processing gas to adjust edge performance.
6. The method of claim 1 , wherein the first processing gas comprises the etching gas and a passivating gas.
7. The method of claim 6 , wherein flowing the first processing gas further comprises selecting a first flow rate and a first composition to flow through the inner distribution zone, and
wherein flowing the second processing gas further comprises selecting a second flow rate and a second composition to flow through the edge distribution zone, and
selecting a third flow rate and a third composition for a third processing gas, and flowing the third processing gas through the middle distribution zone.
8. The method of claim 7 , wherein no processing gas is delivered through the middle region of the showerhead.
9. The method of claim 7 , further comprising flowing the etching gas and the passivating gas through the middle region of the showerhead.
10. The method of claim 7 , further comprising adjusting a distance between the substrate and the showerhead to adjust processing rate.
11. The method of claim 6 , wherein the etching gas is selected from the group consisting of CF 4 , C 2 F 6 , C 4 F 8 , Cl 2 , BCl 3 , CCl 4 , NF 3 , SF 6 , HBr, BBr 3 , C 2 F 2 , O 2 , H 2 , CH 4 , COS, SO 2 , and combinations thereof.
12. The method of claim 11 , wherein the passivating gas is selected from the group consisting of CHF 3 , CH 2 F 2 , CH 3 F, SiCl 4 , HBr, and the combinations thereof.
13. A method for adjusting process uniformity in an etching process, comprising:
positioning a substrate on a substrate support disposed in a plasma chamber,
wherein a showerhead having a bottom surface is disposed in the plasma chamber such that the bottom surface is disposed above the substrate support, and
wherein the bottom surface of the showerhead comprises an inner distribution zone having a plurality of holes directed to a central region of the substrate support, a middle distribution zone having a plurality of holes directed to a middle region of the substrate support located radially outwards to the central region, and an edge distribution zone having a plurality of holes directed to a region near an edge of the substrate support, such that each of the distribution zones is isolated from the other distribution zones;
flowing processing gases to the plasma chamber, wherein flowing the processing gases comprises:
flowing a first processing gas independently through the inner distribution zone towards a central region of the substrate being processed at a first flow rate;
flowing a second processing gas independently through the edge distribution zone at a second flow rate towards an edge region of the substrate, wherein the first processing gas comprises an etching gas and the second processing gas comprises a passivating gas; and
flowing a third processing gas independently through the middle distribution zone at a third flow rate towards a middle region of the substrate located radially outwards to the central region; and
generating a plasma of the processing gases in the plasma chamber.
14. The method of claim 13 , further comprising adjusting a ratio of the first flow rate and second flow rate to improve process uniformity on feature-scale and substrate-scale.
15. The method of claim 13 , further comprising:
taking a measurement of critical dimension bias edge roll-off in each of the inner, middle and edge regions of the substrate; and
adjusting a ratio of at least two of the first, second or third flow rates to improve uniformity.
16. The method of claim 15 , further comprising adjusting the flow rate of the second processing gas to adjust edge performance.
17. The method of claim 13 , wherein the first processing gas comprises the etching gas and a passivating gas.
18. The method of claim 17 , wherein the etching gas is selected from the group consisting of CF 4 , C 2 F 6 , C 4 F 8 , Cl 2 , BCl 3 , CCl 4 , NF 3 , SF 6 , HBr, BBr 3 , C 2 F 2 , O 2 , H 2 , CH 4 , COS, SO 2 , and combinations thereof.
19. The method of claim 18 , wherein the passivating gas is selected from the group consisting of CHF 3 , CH 2 F 2 , CH 3 F, SiCl 4 , HBr, and the combinations thereof.
20. The method of claim 13 , further comprising:
taking a measurement of critical dimension bias edge roll-off in each of the inner, middle and edge regions of the substrate; and
adjusting a composition of at least one of the first, second or third processing gases to improve uniformity.
21. The method of claim 20 , further comprising using a system controller to adjust at least one of the first, second or third flow rates to improve uniformity.
22. The method of claim 21 , wherein generating the plasma comprises applying a RF power between the showerhead and the substrate support.
23. The method of claim 21 , further comprising adjusting a distance between the substrate and the showerhead to adjust processing rate.