Method for functionalizing biosensor chips
A method is disclosed for functionalizing biosensors. The biosensors are based on semiconductor chips mounted on a finished processed wafer. They are provided with sensor fields placed thereupon, which are arranged in any array, and, to be precise, for carrying out a functionalization, for example, with organic molecules such as nucleic acids like DNA, RNA and PNA or with their derivatives, proteins, sugar molecules, or antibodies.
1. A method for functionalizing a biosensor, comprising:
providing a substrate, including at least one sensor field arranged thereon:
applying a photoresist layer over an entire surface of the substrate and then photolithographically patterning the photoresist layer using a photomask with a set pattern, so that a patterned layer is formed, to form a corresponding cavity above the sensor filed;
applying capture molecules to the sensor field, so that the capture molecules are immobilized within the cavity above the sensor filed, wherein prior to the application of capture molecules, a carrier layer based on hydrogel is applied to the sensor field, wherein the application of capture molecules the sensor field is carried out simultaneously with the application of a carrier layer based on hydrogel to the sensor field, and wherein the application of capture molecules is followed by application of an encapsulation layer based on hydrogel; and
mounting a wafer, functionalized in such a manner following the application of capture molecules in upside-down mode to a sawing sheet, tensioned in a sawing frame, and sawing individual chips out of the wafer.
2. The method as claimed in claim 1 , wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.
3. The method as claimed in claim 1 , wherein the carrier layer is based on poly(meth)acrylamide gel.
4. The method as claimed in claim 1 , wherein sensor field is set up as an integrated electrode field.
5. The method as claimed in claim 4 , wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μm.
6. The method as claimed in claim 1 , wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μm.
7. The method as claimed in claim 6 , wherein the photoresist layer is a negative UV photoresist of an epoxy type.
8. The method as claimed in claim 1 , wherein the substrate provided is a fully processed wafer having at least one semiconductor chip, the at least one sensor field being arranged on the semiconductor chip.
9. The method as claimed in claim 8 , wherein an electrical recording circuit is integrated in the semiconductor chip.
10. The method as claimed in claim 9 , wherein the sensor filed is set up as an integrated electrode field.
11. The method as claimed in claim 9 , wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.
12. The method as claimed in claim 9 , wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μm.
13. The method as claimed in claim 8 , wherein the semiconductor chip is a CMOS chip.
14. The method as claimed in claim 9 , wherein the semiconductor chip is a CMOS chip.
15. The method as claimed in claim 8 , wherein the sensor field is set up as an integrated electrode field.
16. The method as claimed in claim 8 , wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.
17. The method as claimed in claim 8 , wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μm.
18. The method as claimed in claim 8 , wherein the carrier layer is based on poly(meth)acrylamide gel.
19. The method as claimed in claim 13 , wherein the sensor filed is set up as an integrated electrode field.
20. The method as claimed in claim 13 , wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.
21. The method as claimed in claim 4 , wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μm.