Gas sensor having a field-effect transistor
A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region.
1. A gas sensor having a field-effect transistor for detecting gases or gas mixtures, comprising:
a substrate having a source region, a drain region and a gate region;
a gas-sensitive layer situated on the gate region; and
a porous adhesive agent situated in the gate region for an adhesion of the gas-sensitive layer;
wherein the porous adhesive agent is an intermediate layer between the gate region of the substrate and the gas-sensitive layer, and wherein the gas-sensitive layer is intercalated in the porous adhesive agent.
2. The gas sensor according to claim 1 , wherein the porous adhesive agent has an electrically insulating characteristic.
3. The gas sensor according to claim 1 , wherein the porous adhesive agent has an electrically conductive characteristic.
4. The gas sensor according to claim 1 , further comprising an electric insulation layer situated between the porous adhesive agent and the gate region.
5. The gas sensor according to claim 1 , wherein the porous adhesive agent is formed by porous silicon carbide.
6. The gas sensor according to claim 1 , wherein the porous adhesive agent is formed by porous silicon.
7. The gas sensor according to claim 1 , wherein the gas-sensitive layer is applied in the porous adhesive agent.
8. The gas sensor according to claim 1 , wherein the adhesion of the gas-sensitive layer to the gate region is enhanced with the aid of at least one of a drying process and a sintering process.
9. The gas sensor according to claim 1 , wherein the gas-sensitive layer includes crystalline metals.
10. The gas sensor according to claim 1 , wherein the gas-sensitive layer includes nanocrystalline metals.
11. A gas sensor having a field-effect transistor for detecting gases or gas mixtures, comprising:
a substrate having a source region, a drain region and a gate region;
a gas-sensitive layer situated on the gate region; and
a porous adhesive agent situated in the gate region for an adhesion of the gas-sensitive layer;
wherein the porous adhesive agent has a porosification with a gradient.
12. The gas sensor according to claim 11 , wherein an intensity of the porosification of the adhesive agent increases in a direction facing away from the substrate.