Gate valve and semiconductor manufacturing apparatus

1. A gate valve of a semiconductor manufacturing apparatus, which is arranged between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, the gate valve comprising:

a first gate valve at a side of the processing chamber which opens and closes an opening of the processing chamber, the first gate valve including a first valve body and a first valve box, the first valve box including a first opening facing the opening of the processing chamber;

a first sealing member which is attached to the first valve body of the first gate valve and seals a clearance between the first opening and the first valve body;

a second gate valve at the side of the transfer chamber which opens and closes an opening of the transfer chamber, the second gate valve including a second valve body and a second valve box, the second valve box including a second opening facing the opening of the transfer chamber; and

a second sealing member which is attached to a second valve body of the second gate valve and seals a clearance between the second opening and the second valve body,

wherein the first and second gate valves are attached to each other such a manner that the substrate can be transferred from the transfer chamber into the processing chamber or vice versa through the first and second openings, and a thermal insulator is inserted between the first and second gate valves to suppress heat transfer from the first gate valve to the second gate valve, and

wherein the first sealing member is formed of a first material and the second sealing member is formed of a second material having material properties different from the first material in terms of vacuum sealability and resistance to an atmosphere of the processing chamber.

2. The gate valve of claim 1 , wherein resistance of the first sealing member to the atmosphere of the processing chamber is greater than that of the second sealing member.

3. The gate valve of claim 1 , wherein the sealability of the second sealing member is greater than that of the first sealing member.

4. The gate valve of claim 1 , wherein the processing is plasma processing, and

wherein plasma resistance of the first sealing member is greater than that of the second sealing member.

5. The gate valve of claim 1 , wherein the first sealing member comprises:

an inner sealing member which is placed adjacent to the processing chamber; and

an outer sealing member which is placed to surround the inner sealing member.

6. The gate valve of claim 5 , wherein a resistance of each of the inner and outer sealing members to at least one of heat, microwaves, and plasma (radicals) is greater than that of the second sealing member, and

wherein a resistance of the inner sealing member to an atmosphere of the processing chamber is greater than that of the second sealing member.

7. The gate valve of claim 5 , wherein the resistance of the inner sealing member to plasma (radicals) is greater than that of the outer sealing member to plasma (radicals), and

wherein the sealability of the outer sealing member is greater than that of the inner sealing member, the sealability of the outer sealing member being equal to that of the second sealing member.

8. A semiconductor manufacturing apparatus comprising:

a processing chamber in which processing is performed;

a transfer chamber which carries a substrate on which the processing is performed; and

the gate valve of claim 1 disposed between the processing chamber and the transfer chamber.

9. A semiconductor manufacturing apparatus comprising:

two or more processing chambers in which processing is performed;

a transfer chamber which carries a substrate on which the processing is performed; and

two or more gate valves each disposed between the processing chamber and the transfer chamber,

wherein at least one of the two or more gate valves is the gate valve of claim 1 .

10. Agate valve of a semiconductor manufacturing apparatus, which is arranged between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, the gate valve comprising:

a first gate valve at a side of the processing chamber which opens and closes an opening of the processing chamber, the first gate valve including a first valve body;

a first sealing member which is attached to the first valve body of the first gate valve and seals a clearance between the opening of the processing chamber and the first valve body;

a second gate valve at the side of the transfer chamber which opens and closes an opening of the transfer chamber the second gate valve including a second valve body; and

a second sealing member which is attached to a second valve body of the second gate valve and seals a clearance between the opening of the transfer chamber and the second valve body,

wherein a thermal insulator is inserted between the first and second gate valves to suppress heat transfer from the first gate valve to the second gate valve, and

wherein the first sealing member is formed of a first material, and the second sealing member is formed of a second material having material properties different from the first material in terms of vacuum sealability and resistance to an atmosphere of the processing chamber.