IP Library Granted Patent US 8,093,563
Granted Patent B2
US 8,093,563 · App. 12/548,764 · Granted Jan 10, 2012

Ion beam stabilization

Assignee: Carl Zeiss NTS, LLC
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Quick Facts
Patent No.
US 8,093,563
App. No.
12/548,764
Granted
Jan 10, 2012
Kind
B2
Abstract

Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.

Claims (14)

1. A method, comprising:

forming an ion beam using a gas field ion source having a tip operating at voltage that is at least 5% greater than a best imaging voltage for the gas; and

using the ion beam to investigate and/or modify a sample.

2. The method of claim 1 , wherein the voltage of the tip of the gas field ion source is at least 10% greater than the best imaging voltage for the gas.

3. The method of claim 1 , wherein the voltage of the tip of the gas field ion source is at least 15% greater than the best imaging voltage for the gas.

4. The method of claim 1 , wherein the voltage of the tip of the gas field ion source is at least 20% greater than the best imaging voltage for the gas.

5. The method of claim 1 , wherein the voltage of the tip of the gas field ion source is at most 30% greater than the best imaging voltage for the gas.

6. The method of claim 1 , wherein the voltage of the tip of the gas field ion source is from 10% to 20% greater than the best imaging voltage for the gas.

7. The method of claim 1 , wherein gas field ion source has a tip comprising a terminal shelf with a trimer that generates the ion beam.

8. The method of claim 1 , wherein the gas field ion source has a tip that generates the ion beam, and motion of atoms at the tip of the gas field ion source is reduced by a factor of at least two relative to motion of the atoms at the tip of the gas field ion source when operating at the best imaging voltage.

9. The method of claim 1 , wherein the gas field ion source has a tip that generates the ion beam, and emission of ions per site at the tip of the gas field ion source is reduced by a factor of at least two relative to emission of ions per site at the tip of the gas field ion source when operating at the best imaging voltage.

10. The method of claim 1 , wherein the gas is a noble gas.

11. The method of claim 1 , wherein the gas is neon.

12. The method of claim 1 , wherein the gas field ion source is part of a gas field ion microscope.

Assignments (2)
CONVERSION AND CHANGE OF NAME Recorded Oct 26, 2010
From: CARL ZEISS SMT INC.
To: CARL ZEISS NTS, LLC
Reel/Frame 025195/0186 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2009
From: RAHMAN, FHM-FARIDUR; FARKAS III, LOUIS S.; NOTTE IV, JOHN A.
To: CARL ZEISS SMT INC.
Reel/Frame 023582/0754 →
Continuity (2)
Provisional Application 61093064 · Aug 29, 2008
Related Publication 20100051805A1 · Mar 4, 2010