Semiconductor device and manufacturing method of semiconductor device
To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
1. A semiconductor device comprising:
a first copper alloy wiring formed in an interlayer insulation film and containing a predetermined additive element in a main component Cu;
a via formed in said interlayer insulation film and electrically connected to the upper surface of said first copper alloy wiring;
a first barrier metal film formed between said first copper alloy wiring and said via, and being in contact with said first copper alloy wiring, and containing nitrogen, and
a second barrier metal film being in contact with said via, between said interlayer insulation film and said via, wherein
each of the first and second barrier metals is formed at a connection portion of the bottom of the via,
the concentration of said predetermined additive element is not more than 0.04 wt %, and
the concentration of said predetermined additive element is not less than 0.01 wt %.
2. The semiconductor device according to claim 1 , wherein
said predetermined additive element is Al, Si, Ge, Ga or Sn,
the first barrier metal is formed along, a side wall of the via, and a bottom of the via, and
the second barrier metal is formed along the first barrier metal, the side wall of the via, and the bottom of the via.
3. The semiconductor device according to claim 1 , wherein
a material of said first barrier metal film is TaN, TaSiN, TiN or WN, and
a material of said second barrier metal film is Ta, Ti, or W.
4. The semiconductor device according to claim 1 , wherein
said interlayer insulation film contains an SiOC film.
5. The semiconductor device according to claim 1 , further comprising:
a second copper alloy wiring provided in said interlayer insulation film above said first copper alloy wiring and electrically connected to the upper surface of said via, wherein
each of said first copper alloy wiring, said second copper alloy wiring and said via contains the predetermined additive element in a main component Cu.
6. The semiconductor device according to claim 1 , wherein
said first barrier metal film is in contact with said interlayer insulation film, between said interlayer insulation film and said via.
7. The semiconductor device according to claim 6 , further comprising a wiring provided in said interlayer insulation film above said first copper alloy wiring and electrically connected to the upper surface of said via, wherein
said first barrier metal film is formed between said interlayer insulation film and said wiring, and is in contact with said interlayer insulation film, and
said second barrier metal film is formed between said interlayer insulation film and said wiring, and is in contact with said wiring.
8. The semiconductor device according to claim 1 , wherein
the concentration of nitrogen contained in said first barrier metal film is not less than 10 atom % but more than 40 atom %.
9. The semiconductor device according to claim 6 , wherein
the film thickness of said first barrier metal film is not less than 1 nm but not more than 10 nm.
10. The semiconductor device according to claim 7 , wherein
the film thickness of said first barrier metal film is not less than 1 nm but not more than 10 nm.
11. A semiconductor device comprising:
a first copper alloy wiring which contains a predetermined additive element in a main component Cu and is formed in a first interlayer insulation film;
a first insulation film formed on the first copper alloy wiring and the first interlayer insulation film;
a second interlayer insulation film formed on said first insulation film;
a via hole which penetrates the second interlayer insulation film and the first insulation film and exposes a top portion of the first copper alloy wiring;
a trench which is formed in the second interlayer insulation film and is arranged on the via hole;
a first barrier metal which is formed on a side wall of the via hole, a bottom portion of the trench, a side wall of the trench, and the top portion of the first copper alloy wiring, contains nitrogen, and connects with the top portion of the first copper alloy wiring;
a second barrier metal which is formed on the first barrier metal; and
a copper alloy metal which is formed on the second barrier metal, contains the predetermined additive element in a main component Cu, and fills the via hole and trench, wherein
each of the first and second barrier metals is formed at a connection portion of the bottom of the via, and
a concentration of the predetermined additive element is not more than 0.04 wt %, and is not less than 0.01 wt %.
12. The semiconductor device according to claim 11 , wherein
the predetermined additive element is Al, Si, Ge, Ga or Sn,
the second barrier metal is formed along the first barrier metal, the side wall of the via, the bottom of the via hole, the side wall of the trench, and the bottom of the trench, and
the top portion of the first copper alloy wiring is connected to the bottom of the via.
13. The semiconductor device according to claim 11 , wherein
a material of said first barrier metal is TaN, TaSiN, TiN or WN, and
a material of said second barrier metal film is Ta, Ti or W.
14. The semiconductor device according to claim 11 , wherein said first and second interlayer insulation film each contain an SiOC film.
15. A semiconductor device according to claim 11 , wherein a concentration of nitrogen included in the second barrier metal is less than a concentration of nitrogen included in the first barrier metal.