Dicing method, method of inspecting integrated circuit element, substrate holding device, and pressure sensitive adhesive film
A dicing method, integrated circuit chip testing method, substrate holding apparatus, and adhesive film are disclosed. A first adhesive film 22 in which the adhesion is reduced by ultraviolet radiation is stretched inside a ring-like frame 21 larger than a wafer size, and a wafer W is adhered on the first adhesion film 22 . A second adhesive film 4 in which the adhesion of the two surfaces is reduced by heating is adhered on a plate-like jig 3 . After the first film is adhered on the second film, dicing is performed. Since the wafer is adhered to the jig, the relative positions of chips do not shift from each other. This makes it possible to load the wafer together with the jig into a testing apparatus and align electrode pads of the chips with a probe. This allows, e.g., collective testing of a plurality of chips.
1. A testing method of a plurality of integrated circuit chips formed on a semiconductor substrate, wherein the testing method comprises:
adhering a rear surface of the semiconductor substrate, which opposes a surface on which the plurality of integrated circuit chips are formed, to a plate-shaped jig by at least one adhesive layer formed over at least an entire region in which integrated circuit elements are arranged;
cutting the semiconductor substrate by cutting means to separate the plurality of integrated circuit elements into individual separated integrated circuit elements, the cut semiconductor substrate being adhered on the jig by the adhesive layer;
aligning the semiconductor substrate adhered on the jig with a probe positioned in a space above the jig; and
testing electrical characteristics of the separated integrated circuit elements while the probe is in contact with electrode pads of the separated integrated circuit elements;
wherein the plate-shaped jig used in the testing method has a thermal expansion coefficient that is less than or substantially equal to a thermal expansion coefficient of the semiconductor substrate to reduce positional shift between the separated integrated circuit elements caused by heating of the separated integrated circuit elements during testing of the separated integrated circuit elements.
2. A testing method according to claim 1 , wherein the at least one adhesive layer is an adhesive film having two adhesive surfaces.
3. A testing method according to claim 2 , wherein the two surfaces of the adhesive film are first and second surfaces, and energies to be applied to reduce adhesion of the first and second surfaces are different in one of type and magnitude.
4. A testing method according to claim 3 , wherein the second surface of the adhesive film is on a jig side, the first surface of the adhesive film is on a semiconductor substrate side, and the energy to be applied to the second surface to reduce the adhesion thereof is smaller than the energy to be applied to the first surface to reduce the adhesion thereof.
5. A testing method according to claim 3 , further comprising:
applying first energy to the second surface of the adhesive film after the electrical characteristics of the separated integrated circuit elements are tested, and peeling the adhesive film from the jig; and
applying second energy to the first surface of the adhesive film, and peeling the separated integrated circuit elements from the adhesive film.
6. A testing method according to claim 5 , wherein
the adhesive layer is formed by laminating a first adhesive film which is adhered to the semiconductor substrate, and wherein adhesion of a surface adhered to the semiconductor substrate is reduced by application of a predetermined energy, and a second adhesive film which is adhered to the jig, and wherein adhesion of two surfaces is reduced by application of energy different from the predetermined energy, and
the first adhesive film is stretched inside a ring-shaped frame having a size larger than the semiconductor substrate.
7. A testing method of an integrated circuit chip, wherein the testing method comprises:
fixing by suction to a chuck table a rear surface of a semiconductor substrate by suction on which a plurality of integrated circuit elements are arranged, a suction surface of the chuck table including suction holes formed in positions corresponding to positions of the integrated circuit elements, the semiconductor substrate being fixed to the chuck table by vacuum sucking force at the suction holes, and the chuck table having a plurality of trenches formed in positions corresponding to scribe lines for separating the plurality of integrated circuit elements arranged on the semiconductor substrate into individual integrated circuit elements, the semiconductor substrate diced along the scribe lines;
separating the plurality of integrated circuit elements into individual separated integrated circuit elements by cutting the semiconductor substrate by cutting means, the plurality of separated integrated circuit elements being fixed to the chuck table by suction;
aligning the semiconductor substrate fixed to the chuck table by suction with a probe positioned in a space above the chuck table; and
testing electrical characteristics of the separated integrated circuit elements while the probe is in contact with electrode pads of the separated integrated circuit elements.
8. A testing method according to claim 7 , wherein the fixing the rear surface of the semiconductor substrate to the chuck table by suction includes fixing the rear surface of the semiconductor substrate, on a surface of which the plurality of integrated circuit elements are arranged, to the chuck table by suction via an adhesive film, the adhesive film being adhered and fixed to the chuck table even after the semiconductor substrate is cut.