Process for producing ruthenium oxide-supported material and process for producing chlorine
There are disclosed a process for producing a ruthenium oxide-supported material, characterized in that a ruthenium compound is supported on a titania carrier in which silica is supported on titania, and the obtained material is then calcined under an atmosphere of an oxidizing gas; and a process for producing chlorine by oxidizing hydrogen chloride with oxygen in the presence of the ruthenium oxide-supported material produced by the above-described process.
1. A process for producing a ruthenium oxide-supported material, comprising a ruthenium compound on a titania carrier in which silica is supported on titania, and then calcining the obtained material under an atmosphere of an oxidizing gas.
2. The process of claim 1 , wherein the titania carrier in which silica is supported on titania is prepared by supporting a silicon compound on the titania, and calcining the silicon compound on the titania under an atmosphere of an oxidizing gas, and wherein the titania carrier is allowed to support the ruthenium compound thereon.
3. The process of claim 2 , wherein the silicon compound is a silicon alkoxide compound.
4. The process of claim 2 , wherein the silicon compound is tetraethyl orthosilicate.
5. The process of claim 1 , wherein a gaseous titanium halide and a gaseous silicon halide tare subjected to a heat treatment under an atmosphere of an oxidizing gas to prepare the titania carrier in which silica is supported on titania, and wherein the titania carrier is allowed to support the ruthenium compound thereon.
6. The process of any one of claims 1 to 5 , wherein a surface coverage of a silica monomolecular layer to the specific surface area of the titania carrier is from 10 to 120%.
7. The process of any one of claims 1 to 5 , wherein the sodium content in the titania carrier is 200 ppm by eight or less.
8. The process of any One of claims 1 to 5 , wherein the calcium content in the titania carrier is 200 ppm by weight or less.
9. The process of any one of claims 1 to 5 , wherein the ratio of a rutile titania to total of the ruffle titania and an anatase titania in the titania carrier is 20% or more.
10. The process according to claim 1 , wherein the titania of the titania carrier is a rutile titania, an anatase titania, an amorphous titania or a mixture thereof.