Integrated circuit with galvanically bonded heat sink
An integrated circuit includes a semiconductor substrate, a first electrical contact formed on the semiconductor substrate, and a first heat sink element bonded to the first electrical contact via a galvanic bond.
1. An integrated circuit comprising:
a semiconductor substrate;
a first electrical contact formed on the semiconductor substrate; and
a first heat sink element bonded to the first electrical contact via a galvanic bond layer, wherein the first heat sink element directly contacts the first electrical contact at a first location, and wherein the galvanic bond layer fills in at least one gap of substantially varying height between the first electrical contact and the first heat sink element.
2. The integrated circuit of claim 1 , wherein the first electrical contact is a top side contact that contacts a top side of the semiconductor substrate.
3. The integrated circuit of claim 1 , wherein the first electrical contact is a bottom side contact that contacts a bottom side of the semiconductor substrate.
4. The integrated circuit of claim 1 , wherein the first electrical contact and the first heat sink element comprise copper.
5. The integrated circuit of claim 1 , wherein the galvanic bond layer comprises a copper layer that bonds the first electrical contact and the first heat sink element together.
6. The integrated circuit of claim 1 , wherein the first heat sink element includes a bowed surface that directly contacts the first electrical contact at the first location.
7. The integrated circuit of claim 1 , wherein the semiconductor substrate comprises a thinned semiconductor substrate.
8. The integrated circuit of claim 7 , wherein the thinned semiconductor substrate is less than or equal to about 10 micrometers.
9. The integrated circuit of claim 1 , wherein the first heat sink element comprises a thinned heat sink element.
10. The integrated circuit of claim 1 , wherein the first heat sink element is positioned entirely inside of a cavity formed in a bottom side of the semiconductor substrate.
11. The integrated circuit of claim 1 , wherein the first electrical contact and the first heat sink element are formed on a top side of the semiconductor substrate, and wherein the integrated circuit further comprises:
a second electrical contact formed on a bottom side of the semiconductor substrate; and
a second heat sink element bonded to the second electrical contact via a galvanic bond.
12. The integrated circuit of claim 11 , and further comprising:
a third electrical contact formed on the top side of the semiconductor substrate; and
a third heat sink element bonded to the third electrical contact via a galvanic bond.
13. The integrated circuit of claim 1 , wherein the integrated circuit comprises a vertical power transistor, and wherein the first electrical contact is a gate, source, or drain contact for the transistor.
14. The integrated circuit of claim 6 , wherein the at least one gap increases in height with increasing distance from the first location.
15. A semiconductor device comprising:
a semiconductor substrate;
contact means formed on the substrate for making an electrical contact to the substrate;
means for dissipating heat from the semiconductor substrate; and
galvanically-deposited means for attaching the means for dissipating heat to the contact means, wherein the means for dissipating heat directly contacts the contact means at a first location, and wherein the galvanically-deposited means fills at least one gap of substantially varying height between the contact means and the means for dissipating heat.