IP Library › Granted Patent US 8,103,917
Granted Patent B2
US 8,103,917 · App. 12/592,271 · Granted Jan 24, 2012

Circuit and method for correcting skew in a plurality of communication channels for communicating with a memory device, memory controller, system and method using the same, and memory test system and method using the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,103,917
App. No.
12/592,271
Granted
Jan 24, 2012
Kind
B2
Abstract

In a circuit and method for correcting skew among a plurality of communication channels used in communicating with a memory circuit, and in a memory controller and memory controlling method, and in a memory system and method, the circuit for correcting skew includes a transmitting circuit for transmitting a reference signal to input ends of the plurality of channels and through the plurality of channels, and a plurality of receiving circuits for receiving at the input ends of the plurality of channels a respective plurality of reflected signals, the reflected signals being reflected from respective output ends of the plurality of channels. A detection circuit receives the reflected signals and detects relative signal propagation time differences between the plurality of channels. A delay circuit coupled to at least one of the channels sets a signal propagation delay in the at least one of the channels based on the detected relative signal propagation time differences.

Claims (34)

1. A circuit configured to correct skew among a plurality of communication channels used in communicating with a memory circuit, comprising:

a transmitting circuit configured to transmit a reference signal to input ends of the plurality of channels and through the plurality of channels;

a plurality of receiving circuits configured to receive at the input ends of the plurality of channels a respective plurality of reflected signals, the reflected signals being reflected from respective output ends of the plurality of channels;

a detection circuit configured to receive the reflected signals and detect relative signal propagation time differences between the plurality of channels; and

a delay circuit coupled to at least one of the channels between an input of the transmitting circuit and an output of at least one of the plurality of receiving circuits and configured to set a signal propagation delay in the at least one of the channels based on the detected relative signal propagation time differences.

2. The circuit of claim 1 , further comprising a plurality of delay circuits coupled to a plurality of the channels configured to set a plurality of signal propagation delays in the plurality of channels based on the detected relative signal propagation time differences.

3. The circuit of claim 1 , wherein the reference signal is a step signal.

4. The circuit of claim 1 , wherein the circuit is at least one of a built-off-test (BOT) circuit used in sending test signals to the memory circuit and a memory controller circuit for controlling the memory circuit.

5. The circuit of claim 1 , wherein the memory circuit is at least one of a device under test (DUT), a DRAM memory circuit, and a DDR3 DRAM memory circuit.

6. The circuit of claim 1 , wherein one of the plurality of channels is a channel configured to communicate a DQS data strobe signal.

7. The circuit of claim 6 , wherein the delay circuit is set such that a phase shift of 90 degrees is introduced in the channel configured to communicate the DQS data strobe signal.

8. The circuit of claim 1 , wherein the delay circuit is at least one of a delay line, a programmable delay line, and an asynchronous programmable delay line.

9. The circuit of claim 1 , wherein the transmitting circuit comprises a source termination circuit configured to terminate the input ends of the channels.

10. The circuit of claim 9 , wherein the output ends of the channels are configured as open circuits when the signals are transmitted through the channels.

11. The circuit of claim 10 , wherein the output ends of the channels are disconnected from the memory circuit when the signals are transmitted through the channels.

12. A memory controller for controlling a memory circuit, the memory controller having a de-skewing capability for correcting skew among a plurality of communication channels used in communicating with the memory circuit, the memory controller comprising:

a transmitting circuit configured to transmit a reference signal to input ends of the plurality of channels and through the plurality of channels;

a plurality of receiving circuits configured to receive at the input ends of the plurality of channels a respective plurality of reflected signals, the reflected signals being reflected from respective output ends of the plurality of channels;

a detection circuit configured to receive the reflected signals and detect relative signal propagation time differences between the plurality of channels; and

a delay circuit coupled to at least one of the channels between an input of the transmitting circuit and an output of at least one of the plurality of receiving circuits and configured to set a signal propagation delay in the at least one of the channels based on the detected signal propagation time differences.

13. The memory controller of claim 12 , further comprising a plurality of delay circuits coupled to a plurality of the channels configured to set a plurality of signal propagation delays in the plurality of channels based on the detected signal propagation time differences.

14. The memory controller of claim 12 , wherein the reference signal is a step signal.

15. The memory controller of claim 12 , wherein the memory circuit is at least one of a DRAM memory circuit and a DDR3 DRAM memory circuit.

16. The memory controller of claim 12 , wherein one of the plurality of channels is a channel configured to communicate a DQS data strobe signal.

17. The memory controller of claim 16 , wherein the delay circuit is set such that a phase shift of 90 degrees is introduced in the channel configured to communicate the DQS data strobe signal.

18. The memory controller of claim 12 , wherein the transmitting circuit comprises a source termination circuit configured to terminate the input ends of the channels.

19. A method which corrects skew among a plurality of communication channels used in communicating with a memory circuit, comprising:

transmitting a reference signal to input ends of the plurality of channels and through the plurality of channels;

receiving at the input ends of the plurality of channels a respective plurality of reflected signals, the reflected signals being reflected from respective output ends of the plurality of channels;

detecting relative signal propagation time differences between the plurality of channels; and

setting a signal propagation delay in at least one of the channels based on the detected relative signal propagation time differences, wherein setting the signal propagation delay comprises:

performing coarse tuning by adjusting a delay in a channel configured to communicate a DQS data strobe signal to be aligned with at least one channel configured to communicate a data signal, and

after performing the coarse tuning, performing fine tuning by adjusting a delay in at least one other channel configured to communicate a data signal to be aligned with the channel configured to communicate the DQS data strobe signal.

20. The method of claim 19 , further comprising setting a plurality of signal propagation delays in the plurality of channels based on the detected relative signal propagation time differences.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2009
From: JANG, YOUNG-CHAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 023603/0388 →
Priority Claims (1)
KR 10-2008-0127103 · Dec 15, 2008 · national
Continuity (1)
Related Publication 20100153792A1 · Jun 17, 2010