Semiconductor light emitting device

1. A semiconductor light emitting device, comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a plurality of semiconductor structures apart from each other on the second conductive semiconductor layer; and

a first electrode layer on the plurality of semiconductor structures,

wherein at least one of the plurality of semiconductor structures includes a bottom surface facing the second conductive semiconductor layer, a top surface having a concave-convex pattern opposite the bottom surface and a plurality of side surfaces, an area of the bottom surface being larger than the top surface,

wherein at least one of the plurality of side surfaces includes a plurality of microfacets, and

wherein the plurality of semiconductor structures has structural differences from the second conductive semiconductor layer such that the plurality of semiconductor structures is distinguishable from the second conductive semiconductor layer.

2. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor structures comprises at least one of multi-angle truncated-horn shape, a multi-angle horn shape and a domed shape where a plurality of microfacets are formed in each of the side surfaces.

3. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor structures comprises a concave-convex pattern.

4. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor structures comprises at least one selected from the group of GaN, InN, AlN, InGaN, AlGaN and InAlGaN.

5. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor structures comprises at least one of an N-type semiconductor, a P-type semiconductor and an undoped semiconductor.

6. The semiconductor light emitting device according to claim 1 , wherein the first electrode comprises at least one of a transparent electrode, a reflection electrode, and a conductive semiconductor layer on the plurality of semiconductor structures and the second conductive semiconductor layer.

7. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor structures includes multiple layers.

8. The semiconductor light emitting device according to claim 1 , comprising at least one of a second electrode and a sub light emitting structure in a region of the first conductive semiconductor layer.

9. The semiconductor light emitting device according to claim 8 , wherein the sub light emitting structure comprises:

a sub semiconductor layer on the first conductive semiconductor layer;

a sub active layer separated from the active layer on the sub semiconductor layer;

a sub second conductive semiconductor layer separated from the second conductive semiconductor layer on the sub active layer.

10. The semiconductor light emitting device according to claim 1 , wherein each side surface of the plurality of semiconductor structures is formed to be inclined at about 5° to 85° with respect to the second conductive semiconductor layer.

11. A semiconductor light emitting device, comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a plurality of semiconductor structures apart from each other on the second conductive semiconductor layer; and

an electrode layer on the plurality of semiconductor structures,

wherein at least one of the plurality of the semiconductor structures includes an upper surface having a concave-convex pattern and a side surface, and

wherein the plurality of semiconductor structures has structural differences from the second conductive semiconductor layer such that the plurality of semiconductor structures is distinguishable from the second conductive semiconductor layer.

12. The semiconductor light emitting device according to claim 11 , wherein the plurality of semiconductor structures includes at least one of a multi-angle horn shape, a multi-angle truncated-horn shape, a cone shape, a truncated-cone shape and a domed shape.

13. The semiconductor light emitting device according to claim 11 , wherein at least one of intervals, heights and maximum diameters of the plurality of semiconductor structures are formed to about 0.1 μm to 100 μm.

14. The semiconductor light emitting device according to claim 11 , wherein the plurality of semiconductor structures comprises a multi-heterojunction layer, a Distributed Brag Reflector (DBR) structure, a quantum well structure or a super lattice structure where a plurality of semiconductors are stacked.

15. The semiconductor light emitting device according to claim 11 , further comprising a flat surface where the semiconductor structures are not formed on the second conductive semiconductor,

wherein a percentage of area of the flat surface to a total area of the second conductive semiconductor layer is lower than 90%.

16. The semiconductor light emitting device according to claim 11 , wherein the plurality of semiconductor structures has a horn shape, and has the same medium as the second conductive semiconductor layer.

17. The semiconductor light emitting device according to claim 11 , wherein the light emitting structure comprises an N-type semiconductor layer or a P-type semiconductor layer on the second conductive semiconductor layer, and comprises at least one of an undoped semiconductor layer, a buffer layer, a substrate and a first electrode under the first conductive semiconductor layer.

18. The semiconductor light emitting device according to claim 11 , wherein the second conductive semiconductor layer and the plurality of semiconductor structures comprise a group III-V compound semiconductor.

19. The semiconductor light emitting device according to claim 11 , wherein at least one of the plurality of the semiconductor structures has a horn shape.