Adhesive sheet for a stealth dicing and a production method of a semiconductor wafer device
An adhesive sheet is provided enabling to efficiently produce the very small size semiconductor chip by a stealth dicing method. An adhesive sheet for a stealth dicing includes a substrate and an adhesive layer formed on one side of the substrate, wherein a Young's modulus of the adhesive sheet at 23° C. is 200 to 600 MPa, and a storage elastic modulus of the adhesive layer at 23° C. is 0.10 to 50 MPa.
1. An adhesive sheet for a stealth dicing comprising a substrate and an adhesive layer formed on one side of the substrate, wherein a Young's modulus of the adhesive sheet at 23° C. is 200 to 600 MPa, and a storage elastic modulus of the adhesive layer at 23° C. is 0.10 to 50 MPa.
2. The adhesive sheet for the stealth dicing as set forth in claim 1 , wherein a breaking elongation of the adhesive sheet when stretched at 200 mm/min is 50% or more.
3. The adhesive sheet for the stealth dicing as set forth in claim 1 , wherein the adhesive layer comprises an adhesive agent composition including an acrylic copolymer, and the thickness of the adhesive layer is 1 to 15 μm.
4. The adhesive sheet for the stealth dicing as set forth in claim 1 , wherein the substrate is vinyl chloride film and a thickness of the substrate is 40 to 90 μm.
5. A production method of a semiconductor device comprising,
a step of forming a modified portion inside a wafer by irradiating a laser beam to the semiconductor wafer formed with a circuit on a surface,
a step of adhering the adhesive sheet for the stealth dicing as set forth in claim 1 to a backside of the semiconductor wafer,
a step of forming chips by dividing the semiconductor wafer by expanding the adhesive sheet, and
a step of picking up the semiconductor chips.
6. A production method of a semiconductor device comprising,
forming a modified portion inside a wafer by irradiating a laser beam to the semiconductor wafer formed with a circuit on a surface;
adhering the adhesive sheet for the stealth dicing as set forth in claim 1 to a backside of the semiconductor wafer;
forming chips by dividing the semiconductor wafer by expanding the adhesive sheet; and
picking up the semiconductor chips.
7. A production method according to claim 6 , comprising adhering the adhesive sheet for the stealth dicing as set forth in claim 2 to a backside of the semiconductor wafer.
8. A production method according to claim 6 , comprising adhering the adhesive sheet for the stealth dicing as set forth in claim 3 to a backside of the semiconductor wafer.
9. A production method according to claim 6 , comprising adhering the adhesive sheet for the stealth dicing as set forth in claim 4 to a backside of the semiconductor wafer.