Method and apparatus for manufacturing semiconductor device

1. An apparatus for manufacturing a semiconductor device comprising:

a processing chamber for a thin-film forming process;

a preheating chamber for preheating a substrate so that a temperature of the preheated substrate is higher than a processing temperature for the thin-film forming process in the processing chamber; and

a substrate-transferring unit for transferring the preheated substrate to the processing chamber,

wherein the processing chamber comprises:

a susceptor; and

a substrate-supporting unit, provided at a predetermined height from the susceptor, for supporting the preheated substrate transferred by the substrate-transferring unit while the preheated substrate is maintained at the predetermined height from an upper surface of the susceptor.

2. The apparatus of claim 1 , wherein the inside of the processing chamber is maintained at a predetermined temperature which is lower than the temperature of the preheated substrate.

3. The apparatus of claim 1 , wherein the substrate-supporting unit comprises:

a first substrate-supporting member, provided along the margin of the susceptor, for supporting the margin of the preheated substrate; and

at least one second substrate-supporting member, provided at the center of the susceptor, for supporting the center of the preheated substrate.

4. The apparatus of claim 3 , wherein the first and second substrate-supporting members are formed of any one of heat-resistant plastic, heat-resistant polymer, quartz, or metal.

5. The apparatus of claim 3 , wherein the first substrate-supporting member is divided into a plurality of sub-supporting members to have a predetermined length, and the neighboring sub-supporting members are engaged with one another.

6. The apparatus of claim 3 , wherein the first substrate-supporting member has a step-shaped portion for supporting rear and lateral surfaces of the preheated substrate.

7. The apparatus of claim 1 , wherein a thermal-insulating member for constantly maintaining the inner temperature of the processing chamber is provided in an inner wall of the processing chamber.

8. The apparatus of claim 1 , wherein the processing chamber forms a thin film on the preheated substrate by PECVD or MOCVD.

9. The apparatus of claim 1 , further comprising:

a surface-treatment chamber for treating a surface of the thin film formed on the substrate by a plasma or annealing process using argon (Ar) or hydrogen (H 2 ) gas so as to improve an interfacial property of the thin film formed on the substrate, wherein the thin film is formed of zinc oxide (ZnO).

10. An apparatus for manufacturing a semiconductor device comprising:

a preheating chamber for preheating a substrate;

a substrate-transferring unit for transferring the preheated substrate to a processing chamber; and

a processing chamber, which is maintained to be lower than a temperature of the preheated substrate, for forming a thin film on the preheated substrate transferred by the substrate-transferring unit,

wherein the processing chamber comprises:

a susceptor; and

a substrate-supporting unit, provided at a predetermined height from the susceptor, for supporting the preheated substrate transferred by the substrate-transferring unit while the preheated substrate is maintained at the predetermined height from an upper surface of the susceptor.

11. The apparatus of claim 10 , wherein the substrate-supporting unit comprises:

a first substrate-supporting member, provided along the margin of the susceptor, for supporting the margin of the preheated substrate; and

at least one second substrate-supporting member, provided at the center of the susceptor, for supporting the center of the preheated substrate.

12. The apparatus of claim 11 , wherein the first substrate-supporting member is divided into a plurality of sub-supporting members to have a predetermined length, and the neighboring sub-supporting members are engaged with one another.

13. The apparatus of claim 11 , wherein the first substrate-supporting member has a step-shaped portion for supporting rear and lateral surfaces of the preheated substrate.

14. The apparatus of claim 10 , further comprising:

a surface-treatment chamber for treating a surface of the thin film formed on the substrate by a plasma or annealing process using argon (Ar) or hydrogen (H 2 ) gas so as to improve an interfacial property of the thin film formed on the substrate, wherein the thin film is formed of zinc oxide (ZnO).

15. The apparatus of claim 10 , wherein the second substrate-supporting member has a curved upper surface.

16. An apparatus for manufacturing a semiconductor device comprising:

a processing chamber for a thin-film forming process;

a preheating chamber for preheating a substrate so that a temperature of the preheated substrate is higher than a processing temperature for the thin-film forming process in the processing chamber; and

a substrate-transferring unit for transferring the preheated substrate to the processing chamber,

wherein the processing chamber comprises:

a susceptor; and

a substrate-supporting unit disposed on a top surface of the susceptor for supporting the preheated substrate transferred by the substrate-transferring unit such that the preheated substrate can be maintained at a predetermined height from the top surface of the susceptor.

17. The apparatus of claim 16 , wherein the substrate-supporting unit comprises:

a first substrate-supporting member located along a peripheral region of the susceptor; and

a second substrate-supporting member located at a center region of the susceptor.

18. The apparatus of claim 17 , wherein the first substrate-supporting member has a step-shaped portion for supporting rear and lateral surfaces of the preheated substrate.

19. The apparatus of claim 18 , wherein the first substrate-supporting member has a temperature controlling member therein adjacent the step-shaped portion.

20. The apparatus of claim 16 , wherein the susceptor does not include a heating element therein.