Ion sources, systems and methods
Ion sources, systems and methods are disclosed.
1. A method, comprising:
generating an ion beam with a gas field ion source; and
using the ion beam to determine distribution and abundance of hydrogen in a sample.
2. The method of claim 1 , wherein the ion beam is used to construct an image of the sample.
3. The method of claim 1 , comprising detecting atoms or ions ejected because of the interaction of the ion beam with the sample.
4. The method of claim 3 , wherein the atoms or ions are hydrogen atoms or ions.
5. The method of claim 3 , wherein the atoms or ions are scattered atoms or ions.
6. The method of claim 3 , wherein the ion beam interacts with a first side of the sample, and the ions formed via the interaction of the ion beam with the sample are detected by a detector disposed on a second side of the sample opposite the first side of the sample.
7. The method of claim 6 , wherein the method provides information about the relative abundance of hydrogen in the sample.
8. The method of claim 1 , wherein the sample comprises a metal or alloy.
9. The method of claim 1 , wherein the method is performed without damaging the sample.
10. The method of claim 1 , wherein the sample is designed for use in a nuclear power plant, the sample is designed for use in a military application, the sample is designed for use in biomedical application, or the sample comprises a metal or alloy.
11. A method, comprising:
generating an ion beam with a gas field ion source;
interacting the ion beam with a sample, the sample being designed for use in a for nuclear power plant, a military application, and/or a biomedical application; and
detecting scattered hydrogen atoms and/or scattered hydrogen ions to determine a relative abundance and distribution of hydrogen in the sample.
12. The method of claim 11 , wherein the sample comprises a metal or an alloy.
13. A method, comprising:
generating an ion beam by interacting a gas with a gas field ion source;
activating an activating gas with the ion beam to provide an activated activating gas;
using the ion beam to determine information about a semiconductor article, the ion beam having a spot size of 10 nm or less at a surface of the semiconductor article; and
based on the information, adding material to the semiconductor article by deposition of material from the activated activating gas or removing material by the assistance of the activated activating gas,
wherein, during the method, implantation of Gallium into the semiconductor article is avoided.
14. The method of claim 13 , wherein determining information of the semiconductor article comprises determining material constituent information of the semiconductor article at various sample depths within the semiconductor article.
15. The method of claim 14 , wherein the semiconductor article comprises a circuit, and wherein the method comprises editing the circuit.
16. The method of claim 15 , wherein editing the circuiting comprises adding material to the circuit.
17. The method of claim 15 , wherein editing the circuit comprises removing material from the circuit.
18. The method of claim 13 , wherein the method is performed using a gas field ion microscope.
19. The method of claim 13 , wherein the ion beam is used to determine sub-surface information about a semiconductor article, and the semiconductor article is edited based on the sub-surface information.
20. The method of claim 19 , wherein the sub-surface information is critical dimension information or material information.